{"title":"利用可切换二极管中的肖特基发射电流进行纳米级铁电 Hf0.5Zr0.5O2 的变异性分析和改进策略","authors":"Kyumin Lee;Sang-Ho Oh;Hojung Jang;Sunhyeong Lee;Byeong-Joo Lee;Hyunsang Hwang","doi":"10.1109/LED.2024.3451968","DOIUrl":null,"url":null,"abstract":"In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE) Hf\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\nZr\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\nO2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2078-2081"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode\",\"authors\":\"Kyumin Lee;Sang-Ho Oh;Hojung Jang;Sunhyeong Lee;Byeong-Joo Lee;Hyunsang Hwang\",\"doi\":\"10.1109/LED.2024.3451968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE) Hf\\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\\nZr\\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\\nO2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 11\",\"pages\":\"2078-2081\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10659077/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10659077/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
在这项工作中，我们利用铁电二极管提出了一种新型的纳米级铁电（FE）Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2（HZO）变异性分析方法。极化变化是通过肖特基发射（SE）电流的变化间接评估的，而肖特基发射是 FE 二极管的主要传导机制。利用这种方法，我们研究了两种提高变异性的策略：1）微波退火（MWA）；2）插入 HfO2 界面层（IL）。微波退火可降低单斜（m-）相分数，而插入 HfO2 界面层可按比例调整 HZO 晶粒大小，这两种方法都有助于提高变异性。此外，还有效降低了热预算，提高了耐用性。我们提出的方法和策略证明了其在缩放 FE 存储器件中的巨大应用潜力。
Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode
In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE) Hf
$_{{0}.{5}}$
Zr
$_{{0}.{5}}$
O2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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