锁定模式下 GaAs 光电导半导体开关的载流子动力学和热效应分析

IF 3.1 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Physics D: Applied Physics Pub Date : 2024-09-11 DOI:10.1088/1361-6463/ad76bd
Chun Liu, Ming Xu, Shengtao Chen, Li Sun, Liqing Zhang, Qianqian Li and Jiahao Wang
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引用次数: 0

摘要

砷化镓光电导半导体开关(GaAs PCSS)在重复频率下的锁定效应会加剧电流拥挤和电场畸变,从而大大增加开关损坏甚至失效的风险。因此,研究载流子传输和发热机制对于提高砷化镓 PCSS 在锁定模式下的性能和寿命具有重要意义。本文通过实验和仿真分析并讨论了对置电极 GaAs PCSS 在低光能和强电场条件下的内部物理过程。利用器件-电路混合模拟研究了锁定模式下 GaAs PCSS 内部的瞬态电场、载流子浓度和晶格温度分布。器件温度与外加偏置电场呈正相关,在电场为 38 kV cm-1 时,峰值温度为 1037.25 K。砷化镓 PCSS 内部的温度分布表明,电极附近发生热击穿和损坏的可能性更大。
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Analysis of carrier dynamics and thermal effect of the GaAs photoconductive semiconductor switch in lock-on mode
The lock-on effect of the gallium arsenide photoconductive semiconductor switch (GaAs PCSS) at repetition rate aggravates the current crowding and electric field distortion, which significantly increases the risk of switch damage or even failure. Therefore, it is of great significance to investigate the carrier transport and the heat generation mechanism for improving the performance and longevity of GaAs PCSS in lock-on mode. The internal physical process of an opposed-electrode GaAs PCSS at low optical energy and strong electric field is analyzed and discussed by experiment and simulation. A device-circuit hybrid simulation is employed to investigate the transient electric field, carrier concentration, and lattice temperature distribution within the GaAs PCSS in lock-on mode. The device temperature exhibits a positive correlation with the applied bias electric field, resulting in a peak temperature of 1037.25 K at an electric field of 38 kV cm−1. The temperature distribution within the GaAs PCSS indicates a greater possibility for thermal breakdown and damage near the electrodes.
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来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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