{"title":"低暗电流锑基短波长红外光探测器","authors":"Mingming Li, Yifan Cheng, Xiangyu Zhang, Ye Zhang, Dongwei Jiang, Zhigang Song, Wanhua Zheng","doi":"10.1063/5.0207138","DOIUrl":null,"url":null,"abstract":"We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing a structure that separates the absorption region and depletion region, the diffusion, recombination, tunneling, and surface dark currents of the photodetector (PD) have been suppressed. Experimental validation has shown that a detector with a diameter of 500 µm at a bias voltage of −0.5 V exhibits a dark current density of 2.5 × 10−6 A/cm2 at the operating temperature of 300 K. The development of PD with low dark current has paved the way for applications with high demands for low noise in the fields of gravitational wave detection and astronomical observation.","PeriodicalId":7619,"journal":{"name":"AIP Advances","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low dark current Sb-based short-wavelength infrared photodetector\",\"authors\":\"Mingming Li, Yifan Cheng, Xiangyu Zhang, Ye Zhang, Dongwei Jiang, Zhigang Song, Wanhua Zheng\",\"doi\":\"10.1063/5.0207138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing a structure that separates the absorption region and depletion region, the diffusion, recombination, tunneling, and surface dark currents of the photodetector (PD) have been suppressed. Experimental validation has shown that a detector with a diameter of 500 µm at a bias voltage of −0.5 V exhibits a dark current density of 2.5 × 10−6 A/cm2 at the operating temperature of 300 K. The development of PD with low dark current has paved the way for applications with high demands for low noise in the fields of gravitational wave detection and astronomical observation.\",\"PeriodicalId\":7619,\"journal\":{\"name\":\"AIP Advances\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AIP Advances\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0207138\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AIP Advances","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0207138","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
我们从理论和实验上证明了在基于 InAs/GaSb/AlSb II 型双势垒超晶格的 CpBnn 型探测器中实现超低暗电流的可行性。通过采用吸收区和耗尽区分离的结构,光电探测器(PD)的扩散、重组、隧道和表面暗电流都得到了抑制。实验验证表明,直径为 500 微米的探测器在-0.5 V 的偏置电压下,工作温度为 300 K 时的暗电流密度为 2.5 × 10-6 A/cm2。
Low dark current Sb-based short-wavelength infrared photodetector
We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing a structure that separates the absorption region and depletion region, the diffusion, recombination, tunneling, and surface dark currents of the photodetector (PD) have been suppressed. Experimental validation has shown that a detector with a diameter of 500 µm at a bias voltage of −0.5 V exhibits a dark current density of 2.5 × 10−6 A/cm2 at the operating temperature of 300 K. The development of PD with low dark current has paved the way for applications with high demands for low noise in the fields of gravitational wave detection and astronomical observation.
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