用于太阳能电池应用的镓基包晶 GaMF3(M = Ca 和 Cd)的结构、光电和热力学特性研究

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-09-03 DOI:10.1007/s11082-024-07354-y
Syed Hatim Shah, Muhammad Arif, Muhammad Tauseef Qureshi, Akif Safeen, Shams Zaman, Iqtidar Ahmad, Ihtisham Ghani, Muhammad Naqeeb Ahmad, Rawaid Ali, Mahmoud Al Elaimi, Lubna Aamir, Jiansheng Lu, Junaid Riaz
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摘要

利用全势密度泛函理论(DFT)研究了 GaMF3(M = Ca 和 Cd)的结构、电子和光学特性以及热力学属性。在这项研究中,使用 (GGA + U) 函数评估了电子和光学特性,而使用 Gibbs 代码评估了包晶的热力学特性。负形成能证实了结构的稳定性。GaCaF3 显示出直接能带隙,而 GaCdF3 则显示出间接能带隙。状态密度图显示存在离子和共价的混合连接。预测了 0-12 eV 能量范围内的光学特性,包括反射率、折射率、吸收系数、介电常数的实部和虚部以及光导率。这些材料在紫外区具有较小的反射率和较高的吸收率,因此是光电材料的理想候选材料。负吉布斯自由能表明这些材料是稳定的,可以在室温下合成。这项研究揭示了用于光电应用的过氧化物晶石的行为和组成。
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Investigation of structure, optoelectronic, and thermodynamic properties of gallium-based perovskites GaMF3 (M = Ca, and Cd) for solar cell applications

Using the full potential density functional theory (DFT), structural, electronic and optical properties as well as thermodynamic attributes of GaMF3 (M = Ca and Cd) were studied. In this investigation, electronic and optical characteristics were assessed using the (GGA + U) functional whereas the thermodynamic characteristics of the perovskite were assessed using the Gibbs code. The negative formation energy confirms structural stability. Whereas GaCaF3 shows a direct band gap, while GaCdF3 exhibits indirect energy band gap. Density of states plots indicated the presence of mixed ionic and covalent connections. Optical characteristics are predicted in the energy span of 0–12 eV, including reflectivity, refractive index, absorption coefficients, real and imaginary parts of dielectric functions, and optical conductivity. These materials have a small reflectivity and high absorption in the Ultraviolet region, which makes them good candidates for optoelectronic materials. The negative Gibbs free energy indicate that these materials are stable and can be synthesize at room temperature. This work sheds light on the behavior and composition of perovskites for optoelectronic application.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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