开发用于场效应晶体管、热驱动神经形态存储器和自旋电子学应用的大规模 CVD 生长二维材料

Sameer Kumar Mallik
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引用次数: 0

摘要

由于现有硅技术的局限性,半导体研究已转向探索二维(2D)材料作为下一代电子器件的候选材料。过渡金属二卤化物(TMDCs)因其卓越的光电特性和先进器件集成的潜力而脱颖而出。本论文的重点是利用化学气相沉积(CVD)技术合成 2DTMDCs,研究其在晶体管、存储器和神经形态计算中的潜在应用。通过优化氯化钠辅助的 CVD 方法,并通过拉曼光谱和光致发光光谱检查其光学特性,解决了 MoS2 样品过早生长、缺陷和不均匀性等难题。报告重点介绍了盐辅助 CVD 生长的 MoS2 场效应晶体管的器件制造技术和电气性能,这些器件表现出无滞后行为和高场效应迁移率。论文引入了一种新颖的蚀刻-街式转移技术,从而提高了晶体管的性能,并使其能够应用于柔性光电子学领域。论文还探讨了单层 MoS2 内存晶体管,展示了多功能室温晶体管和高温多级存储器的性能。这些器件利用界面物理学和离子动力学实现了具有多级存储能力的非易失性存储器。此外,还开发了使用单层 WS2 的高密度存储器件,展示了具有神经形态仿生物可塑性的 6 位存储器操作。研究还包括将二维 TMDC 及其异质层作为潜在的二维稀磁半导体 viadoping,利用密度泛函理论和微磁学模拟进行应变工程,揭示其在自旋电子学中的潜在应用。本论文为推动二维材料在下一代电子学和自旋电子器件中的应用做出了重要贡献。
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Development of large scale CVD grown two dimensional materials for field-effect transistors, thermally-driven neuromorphic memory, and spintronics applications
Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand out for their exceptional optoelectronic properties and potential for advanced device integration. This thesis focuses on the synthesis of 2D TMDCs using Chemical Vapor Deposition (CVD) for their potential applications in transistors, memory, and neuromorphic computing. By optimizing the NaCl-assisted CVD method and examining their optical properties through Raman and photoluminescence spectroscopy, challenges such as premature growth, defects, and non-uniformity in MoS2 samples are addressed. The thesis highlights device fabrication techniques and electrical performance of salt-assisted CVD-grown MoS2 field-effect transistors, which exhibit hysteresis-free behavior and high field-effect mobility. A novel etching-free transfer technique is introduced, improving transistor performance and enabling applications in flexible optoelectronics. The thesis also explores monolayer MoS2 mem-transistors, demonstrating multifunctional room temperature transistor and high-temperature multi-level memory behaviour. These devices leverage interfacial physics and ion dynamics to achieve non-volatile memory with multi-level storage capabilities. Additionally, high density memory devices using monolayer WS2 are developed, which demonstrate 6-bit memory operation with neuromorphic biomimetic plasticity. The study also includes 2D TMDCs and their hetero-bilayers as potential 2D dilute magnetic semiconductors via doping, strain engineering using density functional theory and micromagnetic simulations, revealing potential applications in spintronics. This thesis makes significant contributions to advancing 2D materials for next-generation electronics and spintronic devices.
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