原位 IGZO/ITON 异质结构光电晶体管可增强可见光探测能力

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-23 DOI:10.1109/LED.2024.3448508

Kyeongwoo Jang;Yuseong Jang;Soobin An;Soo-Yeon Lee

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引用次数: 0

摘要

我们提出了一种在可见光下具有优异性能的原位 IGZO/ITON 异质结光晶体管。通过引入低带隙的 ITON 作为光吸收层，该器件在红光（635 纳米）照射下的响应率达到了 30.2 A/W，光敏度为 10^{{4}}$ 的 6.3 倍，检测率为 10^{{13}}$ Jones 的 4.8 倍。由于 ITON 是在 IGZO 沉积后立即通过控制 Ar/N2 混合气体条件的溅射沉积的，无需破坏真空，因此所建议的结构不仅与传统的大面积制造工艺兼容，而且还能最大限度地减少 IGZO 和 ITON 之间的界面缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-Situ IGZO/ITON Heterostructure Phototransistor to Enhance Visible Light Detection

We present an in-situ IGZO/ITON heterojunction phototransistor with exceptional performance under visible light. By introducing a low bandgap of ITON as a light absorption layer, the responsivity of 30.2 A/W, photosensitivity of

$6.3\times 10^{{4}}$

, and detectivity of

$4.8\times 10^{{13}}$

Jones under red light illumination (635nm). Because the ITON was deposited by the sputtering with controlling Ar/N ₂ gas mixture condition immediately after IGZO deposition without breaking the vacuum, the suggested structure is not only compatible with the conventional large-area manufacturing process but also minimizes the interfacial defects between IGZO and ITON.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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