An embedded gate gate-all-around FinFET for biosensing application

A dielectric modulated embedded gate gate-all-around fin field-effect transistor (EGGAA-FinFET) has been proposed for label-free detection applications of biomolecules in this article. The design expands the biomolecule capture area by establishing a cavity below the embedded gate. The performance of EGGAA-FinFET and FinFET biosensors is analyzed in a comprehensive comparison in terms of electrical performance, sensitivity and selectivity. Some important biosensing characteristics for EGGAA-FinFET (FinFET) have been calculated to be 0.43 V (0.32 V) for threshold voltage sensitivity, 2.22 × 10⁶ (8.32 × 10⁴) for current switching ratio sensitivity, and 0.75 (0.65) for subthreshold swing sensitivity. To determine the optimal structure of the biosensor, the effect of structural parameters on sensitivity is investigated. In addition, the effect of the filling factor on the biosensor is considered. The real-world performance of biosensors is assessed using the linearity parameter, showing that the EGGAA-FinFET biosensor has better noise resistance compared to the FinFET biosensor.