{"title":"9T 快速写入 SRAM 位单元,与超低电压无冲突","authors":"Chenjie Jiang, Junqi Wen, Siyu Meng, Kepu Fu, Changquan Xia, Haitao Chen, Qinyu Qian, Liwen Cheng","doi":"10.1049/ell2.70039","DOIUrl":null,"url":null,"abstract":"<p>With the development of processes and reduction of transistor size, transistor sensitivity to voltage changes has increased. Traditional SRAM bit cells struggle to function properly at low voltages, and the lengthy write time necessitated by the write conflict problem will inevitably result in write failure. As ultra-low-voltage SRAM has emerged as a significant direction of research for SRAM, this paper proposes an ultra-low-voltage 9T SRAM bit cell that is conflict-free. By circumventing write conflicts and enabling rapid writing, the bit cell demonstrates its superiority, particularly at ultra-low voltages, by eliminating the requirement for peripheral write-assist circuitry to accomplish chip writing. To assess the performance of the conflict-free 9T bit cell, simulation experiments are conducted utilizing the 28 nm process model. Simulation results indicate that the 9T bit cell proposed in this paper requires only 66% of the writing time of the traditional 6T cell. This enables the cell to accomplish fast writing and more stable writing performance.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70039","citationCount":"0","resultStr":"{\"title\":\"9T fast-write SRAM bit cell with no conflicts for ultra-low voltage\",\"authors\":\"Chenjie Jiang, Junqi Wen, Siyu Meng, Kepu Fu, Changquan Xia, Haitao Chen, Qinyu Qian, Liwen Cheng\",\"doi\":\"10.1049/ell2.70039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>With the development of processes and reduction of transistor size, transistor sensitivity to voltage changes has increased. Traditional SRAM bit cells struggle to function properly at low voltages, and the lengthy write time necessitated by the write conflict problem will inevitably result in write failure. As ultra-low-voltage SRAM has emerged as a significant direction of research for SRAM, this paper proposes an ultra-low-voltage 9T SRAM bit cell that is conflict-free. By circumventing write conflicts and enabling rapid writing, the bit cell demonstrates its superiority, particularly at ultra-low voltages, by eliminating the requirement for peripheral write-assist circuitry to accomplish chip writing. To assess the performance of the conflict-free 9T bit cell, simulation experiments are conducted utilizing the 28 nm process model. Simulation results indicate that the 9T bit cell proposed in this paper requires only 66% of the writing time of the traditional 6T cell. This enables the cell to accomplish fast writing and more stable writing performance.</p>\",\"PeriodicalId\":11556,\"journal\":{\"name\":\"Electronics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2024-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70039\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronics Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70039\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70039","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
9T fast-write SRAM bit cell with no conflicts for ultra-low voltage
With the development of processes and reduction of transistor size, transistor sensitivity to voltage changes has increased. Traditional SRAM bit cells struggle to function properly at low voltages, and the lengthy write time necessitated by the write conflict problem will inevitably result in write failure. As ultra-low-voltage SRAM has emerged as a significant direction of research for SRAM, this paper proposes an ultra-low-voltage 9T SRAM bit cell that is conflict-free. By circumventing write conflicts and enabling rapid writing, the bit cell demonstrates its superiority, particularly at ultra-low voltages, by eliminating the requirement for peripheral write-assist circuitry to accomplish chip writing. To assess the performance of the conflict-free 9T bit cell, simulation experiments are conducted utilizing the 28 nm process model. Simulation results indicate that the 9T bit cell proposed in this paper requires only 66% of the writing time of the traditional 6T cell. This enables the cell to accomplish fast writing and more stable writing performance.
期刊介绍:
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO