二维电子传输散射状态之间的转变

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2024-09-13 DOI:10.1103/physrevb.110.115420
Philipp Heilmann, Pavlo V. Pyshkin, Björn Trauzettel
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引用次数: 0

摘要

我们研究了在扩散边界散射存在的情况下,电子通过外电场驱动的狭长通道的二维传输。在零温条件下,如果我们增加块体无序强度,我们将得出从弹道传输到扩散传输的分析解。这种交叉产生了特征电流密度曲线。此外,我们还说明了从弹道传输过渡到流体动力传输过程中的电流密度。这与电阻率中的古尔兹效应相对应。我们还研究了有限温度对该系统中电流密度和平均电流的影响。特别是,我们分析了电子-电子散射相对于温度的特定缩放定律如何影响通道上的电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Transition between scattering regimes of two-dimensional electron transport
We examine two-dimensional electron transport through a long narrow channel driven by an external electric field in the presence of diffusive boundary scattering. At zero temperature, we derive an analytical solution of the transition from ballistic to diffusive transport if we increase the bulk disorder strength. This crossover yields characteristic current density profiles. Furthermore, we illustrate the current density in the transition from ballistic to hydrodynamic transport. This corresponds to the Gurzhi effect in the resistivity. We also study the influence of finite temperature on current densities and average current in this system. In particular, we analyze how a particular scaling law of electron-electron scattering with respect to temperature affects the current along the channel.
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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