不同温度下 Al/rGO-CdS/FTO 器件的膜特性：MATLAB 集成研究

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-14 DOI:10.1016/j.physe.2024.116107

Amlan Jyoti Kalita , Mridusmita Sharma , Hirendra Das , Pradip Kumar Kalita

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引用次数: 0

摘要

本研究对还原氧化石墨烯（rGO）共轭硫化镉量子点（CdS QD）纳米复合材料（rGO-CdS）的忆阻行为进行了全面研究，深入了解了它们在不同热条件下的动态响应。该研究将实验分析与 MATLAB 仿真相结合，详细了解了不同工作温度（300K、350K、400K 和 450K）与 rGO-CdS 纳米复合材料的记忆行为之间复杂的相互作用。通过不同的结构和化学特性分析，证实了 rGO-CdS 纳米复合材料的形成。利用合成的 rGO-CdS 纳米复合材料，以铝（Al）为上电极，氟掺杂氧化锡（FTO）为下电极，制作了一个三明治结构的装置。使用 Keithley 2450 信号源计，通过扫描直流 (dc) 电压（-5 V → 5 V → -5V），研究了工作温度对所制造的 Al/rGO-CdS/FTO 器件滞后行为的影响。值得注意的是，我们观察到器件电流具有正温度系数，在 450K 和 300K 时记录的最大和最小电流分别为 1.29mA 和 0.66mA。在器件中观察到的电流-电压（I-V）行为表明，在低电阻状态（LRS）下，传导主要由体限制机制控制。然而，在高阻态（HRS）下，传导涉及肖特基势垒和普尔-弗伦克尔效应。利用实验数据，基于 MATLAB 的线性漂移模型模拟了器件在不同温度下的响应。该研究首次全面分析了 Al/rGO-CdS/FTO 器件随温度变化的滞后行为，并结合 MATLAB 仿真，对其在不同温度条件下的运行和作为记忆材料的可能应用提出了有价值的见解。

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Memristive behaviour of Al/rGO-CdS/FTO device at different temperatures: A MATLAB-integrated study

In the present work, a comprehensive study is carried out to investigate the memristive behaviour of reduced graphene oxide (rGO) conjugated cadmium sulphide quantum dot (CdS QD) nanocomposites (rGO-CdS), offering insights into their dynamic response under varying thermal conditions. The study integrates experimental analysis with MATLAB simulation to provide a detailed understanding of the complex interplay between different operating temperature (300K, 350K, 400K, and 450K) and memristive behavior in rGO-CdS nanocomposites. Different structural and chemical characterizations were carried out which confirms the formation of rGO-CdS nanocomposites. A sandwich structured device was fabricated with the synthesized rGO-CdS nanocomposites using Aluminum (Al) as top and Fluorine doped tin oxide (FTO) as bottom electrode. The influence of operating temperature on hysteresis behaviour of the fabricated Al/rGO-CdS/FTO device was investigated using Keithley 2450 source meter by sweeping a direct current (dc) voltage (−5 V → 5 V → −5 V). Notably, we observe a positive temperature coefficient in the device current, with maximum and minimum recorded current of $| 1.29 m A |$ and $| 0.66 m A |$ at 450K and 300K respectively. The current-voltage (I-V) behavior observed in the device reveals that in the low resistance state (LRS), conduction is dominated by bulk-limited mechanisms. However, in the high resistance state (HRS), conduction involves contributions from both Schottky barriers and the Pool-Frenkel effect. A MATLAB based linear drift model was used to simulate the device responses at different temperatures using the experimental data. The study provides first comprehensive analysis of temperature dependent hysteresis behaviour of Al/rGO-CdS/FTO device, integrating MATLAB simulation to glean valuable insights into its operation and possible applications as memristive material across different temperature regimes.

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures

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