{"title":"不同温度下 Al/rGO-CdS/FTO 器件的膜特性：MATLAB 集成研究","authors":"","doi":"10.1016/j.physe.2024.116107","DOIUrl":null,"url":null,"abstract":"<div><p>In the present work, a comprehensive study is carried out to investigate the memristive behaviour of reduced graphene oxide (rGO) conjugated cadmium sulphide quantum dot (CdS QD) nanocomposites (rGO-CdS), offering insights into their dynamic response under varying thermal conditions. The study integrates experimental analysis with MATLAB simulation to provide a detailed understanding of the complex interplay between different operating temperature (300K, 350K, 400K, and 450K) and memristive behavior in rGO-CdS nanocomposites. Different structural and chemical characterizations were carried out which confirms the formation of rGO-CdS nanocomposites. A sandwich structured device was fabricated with the synthesized rGO-CdS nanocomposites using Aluminum (Al) as top and Fluorine doped tin oxide (FTO) as bottom electrode. The influence of operating temperature on hysteresis behaviour of the fabricated Al/rGO-CdS/FTO device was investigated using Keithley 2450 source meter by sweeping a direct current (dc) voltage (−5 V → 5 V → −5 V). Notably, we observe a positive temperature coefficient in the device current, with maximum and minimum recorded current of <span><math><mrow><mo>|</mo><mrow><mn>1.29</mn><mspace></mspace><mi>m</mi><mi>A</mi></mrow><mo>|</mo></mrow></math></span> and <span><math><mrow><mo>|</mo><mrow><mn>0.66</mn><mspace></mspace><mi>m</mi><mi>A</mi></mrow><mo>|</mo></mrow></math></span> at 450K and 300K respectively. The current-voltage (I-V) behavior observed in the device reveals that in the low resistance state (LRS), conduction is dominated by bulk-limited mechanisms. However, in the high resistance state (HRS), conduction involves contributions from both Schottky barriers and the Pool-Frenkel effect. A MATLAB based linear drift model was used to simulate the device responses at different temperatures using the experimental data. The study provides first comprehensive analysis of temperature dependent hysteresis behaviour of Al/rGO-CdS/FTO device, integrating MATLAB simulation to glean valuable insights into its operation and possible applications as memristive material across different temperature regimes.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Memristive behaviour of Al/rGO-CdS/FTO device at different temperatures: A MATLAB-integrated study\",\"authors\":\"\",\"doi\":\"10.1016/j.physe.2024.116107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In the present work, a comprehensive study is carried out to investigate the memristive behaviour of reduced graphene oxide (rGO) conjugated cadmium sulphide quantum dot (CdS QD) nanocomposites (rGO-CdS), offering insights into their dynamic response under varying thermal conditions. The study integrates experimental analysis with MATLAB simulation to provide a detailed understanding of the complex interplay between different operating temperature (300K, 350K, 400K, and 450K) and memristive behavior in rGO-CdS nanocomposites. Different structural and chemical characterizations were carried out which confirms the formation of rGO-CdS nanocomposites. A sandwich structured device was fabricated with the synthesized rGO-CdS nanocomposites using Aluminum (Al) as top and Fluorine doped tin oxide (FTO) as bottom electrode. The influence of operating temperature on hysteresis behaviour of the fabricated Al/rGO-CdS/FTO device was investigated using Keithley 2450 source meter by sweeping a direct current (dc) voltage (−5 V → 5 V → −5 V). Notably, we observe a positive temperature coefficient in the device current, with maximum and minimum recorded current of <span><math><mrow><mo>|</mo><mrow><mn>1.29</mn><mspace></mspace><mi>m</mi><mi>A</mi></mrow><mo>|</mo></mrow></math></span> and <span><math><mrow><mo>|</mo><mrow><mn>0.66</mn><mspace></mspace><mi>m</mi><mi>A</mi></mrow><mo>|</mo></mrow></math></span> at 450K and 300K respectively. The current-voltage (I-V) behavior observed in the device reveals that in the low resistance state (LRS), conduction is dominated by bulk-limited mechanisms. However, in the high resistance state (HRS), conduction involves contributions from both Schottky barriers and the Pool-Frenkel effect. A MATLAB based linear drift model was used to simulate the device responses at different temperatures using the experimental data. The study provides first comprehensive analysis of temperature dependent hysteresis behaviour of Al/rGO-CdS/FTO device, integrating MATLAB simulation to glean valuable insights into its operation and possible applications as memristive material across different temperature regimes.</p></div>\",\"PeriodicalId\":20181,\"journal\":{\"name\":\"Physica E-low-dimensional Systems & Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica E-low-dimensional Systems & Nanostructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S138694772400211X\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S138694772400211X","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Memristive behaviour of Al/rGO-CdS/FTO device at different temperatures: A MATLAB-integrated study
In the present work, a comprehensive study is carried out to investigate the memristive behaviour of reduced graphene oxide (rGO) conjugated cadmium sulphide quantum dot (CdS QD) nanocomposites (rGO-CdS), offering insights into their dynamic response under varying thermal conditions. The study integrates experimental analysis with MATLAB simulation to provide a detailed understanding of the complex interplay between different operating temperature (300K, 350K, 400K, and 450K) and memristive behavior in rGO-CdS nanocomposites. Different structural and chemical characterizations were carried out which confirms the formation of rGO-CdS nanocomposites. A sandwich structured device was fabricated with the synthesized rGO-CdS nanocomposites using Aluminum (Al) as top and Fluorine doped tin oxide (FTO) as bottom electrode. The influence of operating temperature on hysteresis behaviour of the fabricated Al/rGO-CdS/FTO device was investigated using Keithley 2450 source meter by sweeping a direct current (dc) voltage (−5 V → 5 V → −5 V). Notably, we observe a positive temperature coefficient in the device current, with maximum and minimum recorded current of and at 450K and 300K respectively. The current-voltage (I-V) behavior observed in the device reveals that in the low resistance state (LRS), conduction is dominated by bulk-limited mechanisms. However, in the high resistance state (HRS), conduction involves contributions from both Schottky barriers and the Pool-Frenkel effect. A MATLAB based linear drift model was used to simulate the device responses at different temperatures using the experimental data. The study provides first comprehensive analysis of temperature dependent hysteresis behaviour of Al/rGO-CdS/FTO device, integrating MATLAB simulation to glean valuable insights into its operation and possible applications as memristive material across different temperature regimes.
期刊介绍：
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures
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