使用 PowerVia 的英特尔 4 2048×60m4 SRAM 设计与环绕阵列供电方案

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-08-14 DOI:10.1109/LSSC.2024.3443757
Daeyeon Kim;Yusung Kim;Gyusung Park;Anandkumar Mahadevan Pillai;Kunal Bannore;Tri Doan;Muktadir Rahman;Gwanghyeon Baek;Xiaofei Wang;Zheng Guo;Eric Karl
{"title":"使用 PowerVia 的英特尔 4 2048×60m4 SRAM 设计与环绕阵列供电方案","authors":"Daeyeon Kim;Yusung Kim;Gyusung Park;Anandkumar Mahadevan Pillai;Kunal Bannore;Tri Doan;Muktadir Rahman;Gwanghyeon Baek;Xiaofei Wang;Zheng Guo;Eric Karl","doi":"10.1109/LSSC.2024.3443757","DOIUrl":null,"url":null,"abstract":"A \n<inline-formula> <tex-math>$2048\\times 60$ </tex-math></inline-formula>\n m4 SRAM design in Intel 4 using PowerVia is presented. Instead of integrating PowerVia directly into bitcell, an around-the-array power-delivery scheme is introduced to limit the area increase of an SRAM bitcell array, while utilizing the benefits of PowerVias in logic peripheral circuits. The measured test chip demonstrates an improved or comparable \n<inline-formula> <tex-math>$\\rm V_{MIN}$ </tex-math></inline-formula>\n and performance compared to similar nonPowerVia designs. An 8.3-Mb macro comprising of HCC bitcell-based \n<inline-formula> <tex-math>$2048\\times 60$ </tex-math></inline-formula>\n m4 instance is 2% smaller than similar nonPowerVia design and shows a clean voltage-frequency Shmoo.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 2048×60m4 SRAM Design in Intel 4 With Around-the-Array Power Delivery Scheme Using PowerVia\",\"authors\":\"Daeyeon Kim;Yusung Kim;Gyusung Park;Anandkumar Mahadevan Pillai;Kunal Bannore;Tri Doan;Muktadir Rahman;Gwanghyeon Baek;Xiaofei Wang;Zheng Guo;Eric Karl\",\"doi\":\"10.1109/LSSC.2024.3443757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A \\n<inline-formula> <tex-math>$2048\\\\times 60$ </tex-math></inline-formula>\\n m4 SRAM design in Intel 4 using PowerVia is presented. Instead of integrating PowerVia directly into bitcell, an around-the-array power-delivery scheme is introduced to limit the area increase of an SRAM bitcell array, while utilizing the benefits of PowerVias in logic peripheral circuits. The measured test chip demonstrates an improved or comparable \\n<inline-formula> <tex-math>$\\\\rm V_{MIN}$ </tex-math></inline-formula>\\n and performance compared to similar nonPowerVia designs. An 8.3-Mb macro comprising of HCC bitcell-based \\n<inline-formula> <tex-math>$2048\\\\times 60$ </tex-math></inline-formula>\\n m4 instance is 2% smaller than similar nonPowerVia design and shows a clean voltage-frequency Shmoo.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10636777/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10636777/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种使用 PowerVia 的英特尔 4 60 美元 m4 SRAM 设计。该设计没有将 PowerVia 直接集成到位元组中,而是引入了一种环绕阵列的功率传输方案,以限制 SRAM 位元组面积的增加,同时在逻辑外围电路中利用 PowerVias 的优势。与类似的非 PowerVia 设计相比,测量的测试芯片在 $\rm V_{MIN}$ 和性能方面均有改进或相当。一个由基于 HCC 位元组的 $2048/times 60$ m4 实例组成的 8.3-Mb 宏比类似的非 PowerVia 设计小 2%,并显示出干净的电压-频率 Shmoo。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 2048×60m4 SRAM Design in Intel 4 With Around-the-Array Power Delivery Scheme Using PowerVia
A $2048\times 60$ m4 SRAM design in Intel 4 using PowerVia is presented. Instead of integrating PowerVia directly into bitcell, an around-the-array power-delivery scheme is introduced to limit the area increase of an SRAM bitcell array, while utilizing the benefits of PowerVias in logic peripheral circuits. The measured test chip demonstrates an improved or comparable $\rm V_{MIN}$ and performance compared to similar nonPowerVia designs. An 8.3-Mb macro comprising of HCC bitcell-based $2048\times 60$ m4 instance is 2% smaller than similar nonPowerVia design and shows a clean voltage-frequency Shmoo.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
期刊最新文献
0.6-V, μW-Power Four-Stage OTA With Minimal Components, and 100× Load Range Broadband GaN MMIC Doherty Power Amplifier Using Compact Short-Circuited Coupler A 12 V Compliant Multichannel Dual Mode Neural Stimulator With 0.004% Charge Mismatch and a 4×VDD Tolerant On-Chip Discharge Switch in Low-Voltage CMOS A 14 nm MRAM-Based Multi-bit Analog In-Memory Computing With Process-Variation Calibration for 72 Macros-Based Accelerator S2D-CIM: SRAM-Based Systolic Digital Compute-in-Memory Framework With Domino Data Path Supporting Flexible Vector Operation and 2-D Weight Update
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1