利用太赫兹时域椭偏仪研究氧化锌的光学和电学特性

Q2 Engineering Optical Materials: X Pub Date : 2024-09-12 DOI:10.1016/j.omx.2024.100352

Zixi Zhao , Verdad C. Agulto , Toshiyuki Iwamoto , Kosaku Kato , Kohei Yamanoi , Toshihiko Shimizu , Nobuhiko Sarukura , Takashi Fujii , Tsuguo Fukuda , Masashi Yoshimura , Makoto Nakajima

{"title":"利用太赫兹时域椭偏仪研究氧化锌的光学和电学特性","authors":"Zixi Zhao , Verdad C. Agulto , Toshiyuki Iwamoto , Kosaku Kato , Kohei Yamanoi , Toshihiko Shimizu , Nobuhiko Sarukura , Takashi Fujii , Tsuguo Fukuda , Masashi Yoshimura , Makoto Nakajima","doi":"10.1016/j.omx.2024.100352","DOIUrl":null,"url":null,"abstract":"<div><p>In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of wide-bandgap semiconductors, we studied two zinc oxide (ZnO) single crystals with different conductivities. The optical properties of ZnO samples with low conductivity and high conductivity are both obtained by ellipsometric parameters, while the electrical properties of ZnO sample with high conductivity are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of wide-gap semiconductors and can be used to characterize semiconductors with carrier densities higher than 10<sup>16</sup> cm<sup>−3</sup>.</p></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"24 ","pages":"Article 100352"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590147824000640/pdfft?md5=09b00669cf8f0ea510165357d2007a82&pid=1-s2.0-S2590147824000640-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Investigation of the optical and electrical properties of zinc oxide by terahertz time domain ellipsometry\",\"authors\":\"Zixi Zhao , Verdad C. Agulto , Toshiyuki Iwamoto , Kosaku Kato , Kohei Yamanoi , Toshihiko Shimizu , Nobuhiko Sarukura , Takashi Fujii , Tsuguo Fukuda , Masashi Yoshimura , Makoto Nakajima\",\"doi\":\"10.1016/j.omx.2024.100352\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of wide-bandgap semiconductors, we studied two zinc oxide (ZnO) single crystals with different conductivities. The optical properties of ZnO samples with low conductivity and high conductivity are both obtained by ellipsometric parameters, while the electrical properties of ZnO sample with high conductivity are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of wide-gap semiconductors and can be used to characterize semiconductors with carrier densities higher than 10<sup>16</sup> cm<sup>−3</sup>.</p></div>\",\"PeriodicalId\":52192,\"journal\":{\"name\":\"Optical Materials: X\",\"volume\":\"24 \",\"pages\":\"Article 100352\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2590147824000640/pdfft?md5=09b00669cf8f0ea510165357d2007a82&pid=1-s2.0-S2590147824000640-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials: X\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590147824000640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials: X","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590147824000640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

为了证明太赫兹时域椭偏仪（THz-TDE）在宽带隙半导体表征中的应用，我们研究了两种不同电导率的氧化锌（ZnO）单晶体。低电导率和高电导率氧化锌样品的光学特性都是通过椭偏参数得到的，而高电导率氧化锌样品的电学特性则是通过德鲁德模型推导和拟合得到的。这些结果表明，太赫兹-TDE 能有效地获得宽隙半导体的光学和电学特性，可用于表征载流子密度高于 1016 cm-3 的半导体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of the optical and electrical properties of zinc oxide by terahertz time domain ellipsometry

In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of wide-bandgap semiconductors, we studied two zinc oxide (ZnO) single crystals with different conductivities. The optical properties of ZnO samples with low conductivity and high conductivity are both obtained by ellipsometric parameters, while the electrical properties of ZnO sample with high conductivity are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of wide-gap semiconductors and can be used to characterize semiconductors with carrier densities higher than 10¹⁶ cm⁻³.

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