{"title":"二维晶体管发热","authors":"Stuart Thomas","doi":"10.1038/s41928-024-01254-5","DOIUrl":null,"url":null,"abstract":"<p>The researchers — who are based at the Institute of Metal Research in Shenyang China, the University of Science and Technology of China, Peking University and the Shenzhen Institute of Advanced Technology — fabricated micrometre-scale devices using a p-type germanium substrate as the current collector and two separate monolayer graphene emitter and base layers placed on top. Under bias, stimulated emission leads to an increase in the collector current and the transistors exhibited subthreshold swing values as low as 0.38 mV dec<sup>−1</sup> and on-currents of 165.2 μA μm<sup>−1</sup>. Negative differential resistance behaviour with peak-to-valley current ratios of approximately 100 was possible at room temperature. This behaviour was also used to create multi-valued logic gates with reconfigurable logic.</p><p><b>Original reference:</b> <i>Nature</i> <b>632</b>, 782–787 (2024)</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional transistors heat up\",\"authors\":\"Stuart Thomas\",\"doi\":\"10.1038/s41928-024-01254-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The researchers — who are based at the Institute of Metal Research in Shenyang China, the University of Science and Technology of China, Peking University and the Shenzhen Institute of Advanced Technology — fabricated micrometre-scale devices using a p-type germanium substrate as the current collector and two separate monolayer graphene emitter and base layers placed on top. Under bias, stimulated emission leads to an increase in the collector current and the transistors exhibited subthreshold swing values as low as 0.38 mV dec<sup>−1</sup> and on-currents of 165.2 μA μm<sup>−1</sup>. Negative differential resistance behaviour with peak-to-valley current ratios of approximately 100 was possible at room temperature. This behaviour was also used to create multi-valued logic gates with reconfigurable logic.</p><p><b>Original reference:</b> <i>Nature</i> <b>632</b>, 782–787 (2024)</p>\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":33.7000,\"publicationDate\":\"2024-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1038/s41928-024-01254-5\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41928-024-01254-5","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The researchers — who are based at the Institute of Metal Research in Shenyang China, the University of Science and Technology of China, Peking University and the Shenzhen Institute of Advanced Technology — fabricated micrometre-scale devices using a p-type germanium substrate as the current collector and two separate monolayer graphene emitter and base layers placed on top. Under bias, stimulated emission leads to an increase in the collector current and the transistors exhibited subthreshold swing values as low as 0.38 mV dec−1 and on-currents of 165.2 μA μm−1. Negative differential resistance behaviour with peak-to-valley current ratios of approximately 100 was possible at room temperature. This behaviour was also used to create multi-valued logic gates with reconfigurable logic.
期刊介绍:
Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research.
The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society.
Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting.
In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.