具有原生点缺陷的水热法纳米晶氧化锌的光致发光、光电流响应和光催化活性

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-09-15 DOI:10.1016/j.jcrysgro.2024.127894
A. Mahesh, I.N. Jawahar, V. Biju
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引用次数: 0

摘要

纳米晶体氧化锌(ZnO)样品是在不同温度下通过简便的水热法合成的。在 80 °C 下合成的样品(样品代码 HT80)的平均晶粒大小为 32 ± 2 nm,形态不规则,有棒状、线状和盘状。在 160 °C 下制备的样品(样品代码 HT160)具有棒状形态,平均结晶尺寸为 130 ± 5 nm。X 射线光电子能谱显示,两种样品中都存在与 Zn2+ 结合的羟基、氧空位和吸附氧物种。HT80 中键合/吸附的氢氧基和含氧物种的原子百分比较高。由于带弯曲,带隙值低于块状氧化锌。光致发光光谱在 ∼381 nm(3.25 eV)处有一个紫外峰值,在可见光区域有一个宽发射带,以 ∼550 nm(2.25 eV)为中心,分别对应于带边发射和缺陷介导发射。两种样品的发射曲线相似,表明存在相似类型的原生点缺陷,即不同电荷态的锌空位、锌间隙和氧空位。样品 HT160 由于具有更好的光子吸收,因此发射更强。由于更好的光子吸收和更大的晶体尺寸,HT160 在宽光照射下的光电流响应也更大,灵敏度为 37。该样品随波长变化的光电流响应在 380 纳米波长处灵敏度最高,灵敏度为 152,对应于带对带激发。在可见光(600 纳米)照射下,由于吸附的 O2 或氢氧化物被俘获的电子直接光激发到导带而导致解吸,因此也会出现微弱的光响应。两种样品的光催化效率相当,HT80 和 HT160 的速率常数分别为 3.1 × 10-2 min-1 和 3.7 × 10-2 min-1。HT160 样品的重复利用率要高得多,这归功于其较大的平均晶粒尺寸和均匀的形态。
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Photoluminescence, photocurrent response and photocatalytic activity of hydrothermally derived nanocrystalline ZnO with native point defects

Nanocrystalline zinc oxide (ZnO) samples are synthesized through a facile hydrothermal route at different temperatures. Sample synthesized at 80 °C (sample code HT80) has average crystallite size of 32 ± 2 nm and the morphology is not unform with the presence of rods, wires and discs. Sample prepared at 160 °C (sample code HT160) has rod-like morphology with an average crystallite size of 130 ± 5 nm. X-ray photoelectron spectra reveal the presence of hydroxyl groups bonded to Zn2+, oxygen vacancies and adsorbed oxygen species in both the samples. Atomic percentage of the bonded/adsorbed hydroxides and oxygen containing species is higher in HT80. Band gaps values are lower in comparison with bulk ZnO due to band bending. Photoluminescence spectra has a UV peak at ∼381 nm (3.25 eV) and a broad emission band in the visible region centred at ∼550 nm (2.25 eV) respectively corresponding to the band edge emission and defect mediated emission. The emission profile of both samples is similar indicating the presence of similar type of native point defects viz., Zn vacancies, Zn interstitials and oxygen vacancies in different charge states. Sample HT160 has more intense emission due to the better photonic absorption. The photocurrent response under wide light irradiation is also larger for HT160 with a sensitivity of 37 due to the better photonic absorption and larger crystallite size. Wavelength dependent photocurrent response for this sample shows highest sensitivity at 380 nm with a sensitivity of 152 corresponding to the band-to-band excitation. A weak photoresponse for visible light irradiation (∼600 nm) due to the desorption of adsorbed O2 or hydroxide species caused by the direct photoexcitation of the captured electron to the conduction band is also noted. Photocatalytic efficiency of both the samples are comparable with rate constants 3.1 × 10−2 min−1 and 3.7 × 10−2 min−1 respectively for HT80 and HT160. The reusability is much better for sample HT160 which is attribute to larger average crystallite size and uniform morphology.

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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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