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引用次数: 0
摘要
通过第一原理计算,我们研究了单层掺杂 3d 过渡金属的 PtS2 的电子和磁性能。通过掺杂 Ti 和 Ni,我们获得了非磁性半导体;通过掺杂 V 和 Cr,我们获得了半金属;通过掺杂 Co,我们获得了铁磁性半导体;通过掺杂 Mn 和 Fe,我们获得了反铁磁性半导体。产生的总磁矩可达 3 μB。居里温度是通过均场近似的海森堡模型和蒙特卡罗模拟确定的。1T 相过渡金属二卤化物被证明是实现二维磁性半导体的一个前景广阔的平台。
Two-Dimensional Magnetic Semiconductors by Substitutional Doping of Monolayer PtS2
Using first-principles calculations, we study the electronic and magnetic properties of monolayer PtS2 doped substitutionally with 3d transition metals. We obtain nonmagnetic semiconductors by doping with Ti and Ni, half-metals by doping with V and Cr, ferromagnetic semiconductors by doping with Co, and antiferromagnetic semiconductors by doping with Mn and Fe. Total magnetic moments of up to 3 μB are created. The Curie temperature is determined by means of a Heisenberg model in the mean-field approximation and adopting Monte Carlo simulations. 1T phase transition-metal dichal-cogenides turn out to be a promising platform for realizing two-dimensional magnetic semiconductors.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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