时变电场动态产生自旋极化的内在机制

Xukun Feng, Jin Cao, Zhi-Fan Zhang, Lay Kee Ang, Shen Lai, Hua Jiang, Cong Xiao, Shengyuan A. Yang
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引用次数: 0

摘要

绝缘体中的自旋电控制是低消耗和超快自旋电子学所需要的,但其基本机制在很大程度上仍未被探索。在这里,我们提出了一种由时变电场驱动的动态自旋生成的内在效应。在带内响应机制中,它可以被很好地表述为贝里曲率效应,并导致两种在$dc$极限中被禁止的现象:非磁性绝缘体中的线性自旋生成和$\mathcal{PT}$对称非磁性绝缘体中的本征N{\'e}el自旋轨道力矩。这些现象是由场的时间导数而不是场本身驱动的,并且在一阶动态反常自旋极化性中具有量子起源。结合第一性原理计算,我们预测了在非磁性单层铋和反铁磁性偶层锰铋_2_Te_4$中由太赫兹场驱动的可观效应,这些效应可以在实验中检测到。
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Intrinsic Dynamic Generation of Spin Polarization by Time-Varying Electric Field
Electric control of spin in insulators is desired for low-consumption and ultrafast spintronics, but the underlying mechanism remains largely unexplored. Here, we propose an intrinsic effect of dynamic spin generation driven by time-varying electric field. In the intraband response regime, it can be nicely formulated as a Berry curvature effect and leads to two phenomena that are forbidden in the $dc$ limit: linear spin generation in nonmagnetic insulators and intrinsic N{\'e}el spin-orbit torque in $\mathcal{PT}$-symmetric antiferromagnetic insulators. These phenomena are driven by the time derivative of field rather than the field itself, and have a quantum origin in the first-order dynamic anomalous spin polarizability. Combined with first-principles calculations, we predict sizable effects driven by terahertz field in nonmagnetic monolayer Bi and in antiferromagnetic even-layer MnBi$_2$Te$_4$, which can be detected in experiment.
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