AFM有序化对Mg3X2(X:C、Si、Ge)单层热电响应的影响:ADFT洞察。

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Journal of Physics: Condensed Matter Pub Date : 2024-10-14 DOI:10.1088/1361-648X/ad7e72
Krishnanshu Basak, Supriya Ghosal, Subhadip Nath, Susmita Jana, Debnarayan Jana
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引用次数: 0

摘要

在过去的几十年里,二维材料因其在热电和纳米电子器件中的潜在应用而备受关注。本研究在密度泛函理论(DFT)计算框架下,通过求解半经典波尔兹曼输运方程,系统地介绍了二维蜂窝-卡戈麦 Mg3X2 (X:C、Si、Ge)结构的机械、电子和热电特性。根据弹性常数,我们推断出所有系统在本质上都是机械稳定的脆性系统。电子结构计算表明,这些材料的非磁性(NM)相为半金属。由于散射系数大和非谐波性高,所有结构都显示出极低的晶格热导率(0.9-1.5 W/mK)。由于反铁磁(AFM)排列中的带几乎是平坦无色散的,因此在费米级附近存在尖锐的态密度(DOS)峰,这有望提高塞贝克系数,从而增强热电性能。在 T = 700 K 时,Mg3Si2 和 Mg3Ge2 结构在 AFM 相的热电功勋值(ZT)估计值分别为 0.78 和 0.67 左右。
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Effect of AFM ordering on thermoelectric responses of Mg3X2(X: C, Si, Ge) monolayers : a DFT insight.

Two-dimensional materials have gained a lot of attention in the last few decades due to their potential applications in thermoelectric and nano-electronic devices. This study systematically presents the mechanical, electronic and thermoelectric characteristics of two-dimensional honeycomb-kagomeMg3X2(X:C,Si,Ge) structures in the framework of density functional theory computations and by solving semiclassical Boltzmann transport equation. The geometrical stability of these structures is validated by phonon spectrum and molecular dynamics simulations. Following the elastic constants, we have inferred that all the systems are mechanically stable and brittle in nature. Lower values of Debye temperature of all structures suggest thatMg3X2monolayers should have lower values of lattice thermal conductivity compared to graphene. Electronic structure calculations indicate that these materials are semimetallic in their nonmagnetic phase. All the structures display remarkably low lattice thermal conductivity (0.9-1.5 W (mK)-1) due to a large scattering factor and higher anharmonicity. The presence of sharp density of states peaks close to the Fermi level, arising from nearly flat and dispersionless band in the antiferromagnetic (AFM) arrangement, is poised to enhance the Seebeck coefficient, thereby potentially boosting the thermoelectric performance. The estimated values of thermoelectric figure of merit (ZT) are around 0.78 and 0.67 forMg3Si2andMg3Ge2structure respectively in AFM phase atT= 700 K. These outcomes of our findings suggest thatMg3X2monolayers exhibit substantial promise for thermoelectric device application.

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来源期刊
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter 物理-物理:凝聚态物理
CiteScore
5.30
自引率
7.40%
发文量
1288
审稿时长
2.1 months
期刊介绍: Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.
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