{"title":"提高柔性适度掺银 Bi0.5Sb1.5Te3 薄膜在宽温度范围内的热电性能","authors":"","doi":"10.1016/j.vacuum.2024.113673","DOIUrl":null,"url":null,"abstract":"<div><div>Motivated by previous investigations on Ag-doped Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> films deposited on various kinds of substrates, we introduced the Ag doping of moderate content into flexible Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> films through magnetron co-sputtering. The Ag doping level was found to have significant influence on the film microstructure and orientation. The remarkedly increased carrier concentration suppresses the bipolar conduction, contributing to superior thermoelectric performance in a wide temperature range from 300 K to 580 K. As a result, the 3.5 % Ag-doped Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> film reveals the highest <em>PF</em> value of 1373 μWm<sup>-1</sup> K<sup>−2</sup> at 480 K, as well as the best average <em>PF</em> of 1290 μWm<sup>-1</sup> K<sup>−2</sup> within 300–580 K, which are competitive among the flexible BiSbTe-based thin films.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":null,"pages":null},"PeriodicalIF":3.8000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved thermoelectric performance in wide temperature range of flexible moderately Ag-doped Bi0.5Sb1.5Te3 films\",\"authors\":\"\",\"doi\":\"10.1016/j.vacuum.2024.113673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Motivated by previous investigations on Ag-doped Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> films deposited on various kinds of substrates, we introduced the Ag doping of moderate content into flexible Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> films through magnetron co-sputtering. The Ag doping level was found to have significant influence on the film microstructure and orientation. The remarkedly increased carrier concentration suppresses the bipolar conduction, contributing to superior thermoelectric performance in a wide temperature range from 300 K to 580 K. As a result, the 3.5 % Ag-doped Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> film reveals the highest <em>PF</em> value of 1373 μWm<sup>-1</sup> K<sup>−2</sup> at 480 K, as well as the best average <em>PF</em> of 1290 μWm<sup>-1</sup> K<sup>−2</sup> within 300–580 K, which are competitive among the flexible BiSbTe-based thin films.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2024-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X2400719X\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X2400719X","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
受先前对沉积在各种基底上的掺银 Bi0.5Sb1.5Te3 薄膜研究的启发,我们通过磁控共溅射将适量掺银引入柔性 Bi0.5Sb1.5Te3 薄膜中。研究发现,银掺杂水平对薄膜的微观结构和取向有显著影响。结果表明,掺杂 3.5 % Ag 的 Bi0.5Sb1.5Te3 薄膜在 480 K 时的 PF 值最高,达到 1373 μWm-1 K-2,在 300-580 K 范围内的平均 PF 值最好,达到 1290 μWm-1 K-2,在柔性 BiSbTe 基薄膜中具有竞争力。
Improved thermoelectric performance in wide temperature range of flexible moderately Ag-doped Bi0.5Sb1.5Te3 films
Motivated by previous investigations on Ag-doped Bi0.5Sb1.5Te3 films deposited on various kinds of substrates, we introduced the Ag doping of moderate content into flexible Bi0.5Sb1.5Te3 films through magnetron co-sputtering. The Ag doping level was found to have significant influence on the film microstructure and orientation. The remarkedly increased carrier concentration suppresses the bipolar conduction, contributing to superior thermoelectric performance in a wide temperature range from 300 K to 580 K. As a result, the 3.5 % Ag-doped Bi0.5Sb1.5Te3 film reveals the highest PF value of 1373 μWm-1 K−2 at 480 K, as well as the best average PF of 1290 μWm-1 K−2 within 300–580 K, which are competitive among the flexible BiSbTe-based thin films.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.