Xiao Qin , Jieqiong Zhang , Jun Liu , Bo Zhao , Chengguo Li , Qian Wan , Cong Jiang , Jiayun Wei , Wei Han , Baoyuan Wang , Lin Lv , Xu Chen , Houzhao Wan , Hao Wang
{"title":"超宽带隙 Ga2O3 的异质晶片键合:综述","authors":"Xiao Qin , Jieqiong Zhang , Jun Liu , Bo Zhao , Chengguo Li , Qian Wan , Cong Jiang , Jiayun Wei , Wei Han , Baoyuan Wang , Lin Lv , Xu Chen , Houzhao Wan , Hao Wang","doi":"10.1016/j.mtphys.2024.101557","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>), with its ultra-wide bandgap (∼4.8 eV) and high theoretical breakdown field (8 MV/cm), holds significant research value and promising application in power electronics and microwave radio-frequency (RF) devices. However, the extremely low thermal conductivity of Ga<sub>2</sub>O<sub>3</sub> severely impedes the fabrication of complicated structures and the optimization of device performance. The wafer bonding technology, as a method to fabricate heterogeneous structures materials, newly applied on Ga<sub>2</sub>O<sub>3</sub> to fabricate Ga<sub>2</sub>O<sub>3</sub> hybrid materials. This paper reviews the wafer bonding technology for ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub> material based on plasma activation and room-temperature surface activation, as well as the heterogeneous integration with silicon (Si), silicon carbide (SiC), and diamond. The effects of various wafer bonding methods on the bonding quality, thermal, and electrical properties are systematically summarized. Finally, the advancements of Ga<sub>2</sub>O<sub>3</sub>-based heterogeneous structures in the applications of power, RF, and optoelectronic devices are summarized. This review aims to address the key challenges in Ga<sub>2</sub>O<sub>3</sub> material through an understanding of principles and development of bonding technology, thereby facilitating the practical application of Ga<sub>2</sub>O<sub>3</sub>-based devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101557"},"PeriodicalIF":10.0000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heterogeneous wafer bonding of ultra-wide bandgap Ga2O3: A review\",\"authors\":\"Xiao Qin , Jieqiong Zhang , Jun Liu , Bo Zhao , Chengguo Li , Qian Wan , Cong Jiang , Jiayun Wei , Wei Han , Baoyuan Wang , Lin Lv , Xu Chen , Houzhao Wan , Hao Wang\",\"doi\":\"10.1016/j.mtphys.2024.101557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>), with its ultra-wide bandgap (∼4.8 eV) and high theoretical breakdown field (8 MV/cm), holds significant research value and promising application in power electronics and microwave radio-frequency (RF) devices. However, the extremely low thermal conductivity of Ga<sub>2</sub>O<sub>3</sub> severely impedes the fabrication of complicated structures and the optimization of device performance. The wafer bonding technology, as a method to fabricate heterogeneous structures materials, newly applied on Ga<sub>2</sub>O<sub>3</sub> to fabricate Ga<sub>2</sub>O<sub>3</sub> hybrid materials. This paper reviews the wafer bonding technology for ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub> material based on plasma activation and room-temperature surface activation, as well as the heterogeneous integration with silicon (Si), silicon carbide (SiC), and diamond. The effects of various wafer bonding methods on the bonding quality, thermal, and electrical properties are systematically summarized. Finally, the advancements of Ga<sub>2</sub>O<sub>3</sub>-based heterogeneous structures in the applications of power, RF, and optoelectronic devices are summarized. This review aims to address the key challenges in Ga<sub>2</sub>O<sub>3</sub> material through an understanding of principles and development of bonding technology, thereby facilitating the practical application of Ga<sub>2</sub>O<sub>3</sub>-based devices.</div></div>\",\"PeriodicalId\":18253,\"journal\":{\"name\":\"Materials Today Physics\",\"volume\":\"48 \",\"pages\":\"Article 101557\"},\"PeriodicalIF\":10.0000,\"publicationDate\":\"2024-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Physics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2542529324002335\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2542529324002335","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Heterogeneous wafer bonding of ultra-wide bandgap Ga2O3: A review
Gallium oxide (Ga2O3), with its ultra-wide bandgap (∼4.8 eV) and high theoretical breakdown field (8 MV/cm), holds significant research value and promising application in power electronics and microwave radio-frequency (RF) devices. However, the extremely low thermal conductivity of Ga2O3 severely impedes the fabrication of complicated structures and the optimization of device performance. The wafer bonding technology, as a method to fabricate heterogeneous structures materials, newly applied on Ga2O3 to fabricate Ga2O3 hybrid materials. This paper reviews the wafer bonding technology for ultra-wide bandgap Ga2O3 material based on plasma activation and room-temperature surface activation, as well as the heterogeneous integration with silicon (Si), silicon carbide (SiC), and diamond. The effects of various wafer bonding methods on the bonding quality, thermal, and electrical properties are systematically summarized. Finally, the advancements of Ga2O3-based heterogeneous structures in the applications of power, RF, and optoelectronic devices are summarized. This review aims to address the key challenges in Ga2O3 material through an understanding of principles and development of bonding technology, thereby facilitating the practical application of Ga2O3-based devices.
期刊介绍:
Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.