{"title":"通过与 In3+ 离子和聚合物协同封装增强 CsPbBr3 量子点的防潮性能","authors":"Qiu-Chen Yu, Xiu-Quan Gu, Feng Tong, Zheng Chen, Sheng Huang","doi":"10.1016/j.mssp.2024.108949","DOIUrl":null,"url":null,"abstract":"<div><div>Perovskite gas sensors have a very broad market prospect and application potential due to their attractive gas sensing performance and low manufacturing cost. However, the current environmental stability of perovskites is a major challenge that hinders their widespread application. In this study, Perovskite quantum dots (PQDs) were prepared by a simple room-temperature synthesis method and modified with a ligand In(Acac)<sub>3</sub> to passivate their surface defects. Ethylene-vinyl acetate (EVA) was added to protect the QDs from oxygen and moisture. The effect of EVA contents on the sensor performance was investigated. At the optimal ratio of 3 % EVA, the sensor exhibited a response sensitivity of 0.25–80 ppm CH<sub>3</sub>OH gas at room temperature (RT) and the detection limit was around 3 ppm, with a stability of over 40 days. Compared to the CsPbBr<sub>3</sub> sensor, the CsPbBr<sub>3</sub>-In/EVA sensor showed a significant improvement in the gas-sensitive response and persistence. The device can resist the interference of wet gas effectively and maintained sensitivity even at 90 % RH, solving the problem of poor moisture resistance of current PQDs. This dual strategy contributes to the advancement of more precise and durable sensing solutions, addressing a critical need in the field.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced moisture resistance performance of CsPbBr3 quantum dots through synergetic encapsulation with In3+ ions and polymer\",\"authors\":\"Qiu-Chen Yu, Xiu-Quan Gu, Feng Tong, Zheng Chen, Sheng Huang\",\"doi\":\"10.1016/j.mssp.2024.108949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Perovskite gas sensors have a very broad market prospect and application potential due to their attractive gas sensing performance and low manufacturing cost. However, the current environmental stability of perovskites is a major challenge that hinders their widespread application. In this study, Perovskite quantum dots (PQDs) were prepared by a simple room-temperature synthesis method and modified with a ligand In(Acac)<sub>3</sub> to passivate their surface defects. Ethylene-vinyl acetate (EVA) was added to protect the QDs from oxygen and moisture. The effect of EVA contents on the sensor performance was investigated. At the optimal ratio of 3 % EVA, the sensor exhibited a response sensitivity of 0.25–80 ppm CH<sub>3</sub>OH gas at room temperature (RT) and the detection limit was around 3 ppm, with a stability of over 40 days. Compared to the CsPbBr<sub>3</sub> sensor, the CsPbBr<sub>3</sub>-In/EVA sensor showed a significant improvement in the gas-sensitive response and persistence. The device can resist the interference of wet gas effectively and maintained sensitivity even at 90 % RH, solving the problem of poor moisture resistance of current PQDs. This dual strategy contributes to the advancement of more precise and durable sensing solutions, addressing a critical need in the field.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S136980012400845X\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S136980012400845X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhanced moisture resistance performance of CsPbBr3 quantum dots through synergetic encapsulation with In3+ ions and polymer
Perovskite gas sensors have a very broad market prospect and application potential due to their attractive gas sensing performance and low manufacturing cost. However, the current environmental stability of perovskites is a major challenge that hinders their widespread application. In this study, Perovskite quantum dots (PQDs) were prepared by a simple room-temperature synthesis method and modified with a ligand In(Acac)3 to passivate their surface defects. Ethylene-vinyl acetate (EVA) was added to protect the QDs from oxygen and moisture. The effect of EVA contents on the sensor performance was investigated. At the optimal ratio of 3 % EVA, the sensor exhibited a response sensitivity of 0.25–80 ppm CH3OH gas at room temperature (RT) and the detection limit was around 3 ppm, with a stability of over 40 days. Compared to the CsPbBr3 sensor, the CsPbBr3-In/EVA sensor showed a significant improvement in the gas-sensitive response and persistence. The device can resist the interference of wet gas effectively and maintained sensitivity even at 90 % RH, solving the problem of poor moisture resistance of current PQDs. This dual strategy contributes to the advancement of more precise and durable sensing solutions, addressing a critical need in the field.
期刊介绍：
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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