{"title":"MBE 生长的掺锡 Ga2O3 同外延薄膜的传输和电子结构特性","authors":"Siliang Kuang , Zhenni Yang , Ziqi Zhang , Ziqian Sheng , Shenglong Wei , Yihong Chen , Wenjing Xu , Ye Yang , Duanyang Chen , Hongji Qi , Kelvin H.L. Zhang","doi":"10.1016/j.mtphys.2024.101555","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 10<sup>16</sup> to 2.8 × 10<sup>19</sup> cm<sup>−3</sup>. The UID film with an electron density of 2.1 × 10<sup>16</sup> cm<sup>−3</sup> exhibits a notable RT mobility of 129 cm<sup>2</sup>/Vs and a peak mobility of 900 cm<sup>2</sup>/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga<sub>2</sub>O<sub>3</sub> films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga<sub>2</sub>O<sub>3</sub> film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga<sub>2</sub>O<sub>3</sub> films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga<sub>2</sub>O<sub>3</sub> and its electronic device applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101555"},"PeriodicalIF":10.0000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films\",\"authors\":\"Siliang Kuang , Zhenni Yang , Ziqi Zhang , Ziqian Sheng , Shenglong Wei , Yihong Chen , Wenjing Xu , Ye Yang , Duanyang Chen , Hongji Qi , Kelvin H.L. Zhang\",\"doi\":\"10.1016/j.mtphys.2024.101555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 10<sup>16</sup> to 2.8 × 10<sup>19</sup> cm<sup>−3</sup>. The UID film with an electron density of 2.1 × 10<sup>16</sup> cm<sup>−3</sup> exhibits a notable RT mobility of 129 cm<sup>2</sup>/Vs and a peak mobility of 900 cm<sup>2</sup>/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga<sub>2</sub>O<sub>3</sub> films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga<sub>2</sub>O<sub>3</sub> film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga<sub>2</sub>O<sub>3</sub> films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga<sub>2</sub>O<sub>3</sub> and its electronic device applications.</div></div>\",\"PeriodicalId\":18253,\"journal\":{\"name\":\"Materials Today Physics\",\"volume\":\"48 \",\"pages\":\"Article 101555\"},\"PeriodicalIF\":10.0000,\"publicationDate\":\"2024-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Physics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2542529324002311\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2542529324002311","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped β-Ga2O3 homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 1016 to 2.8 × 1019 cm−3. The UID film with an electron density of 2.1 × 1016 cm−3 exhibits a notable RT mobility of 129 cm2/Vs and a peak mobility of 900 cm2/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga2O3 films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga2O3 film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga2O3 films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga2O3 and its electronic device applications.
期刊介绍:
Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.