MBE 生长的掺锡 Ga2O3 同外延薄膜的传输和电子结构特性

IF 10 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Today Physics Pub Date : 2024-09-20 DOI:10.1016/j.mtphys.2024.101555
Siliang Kuang , Zhenni Yang , Ziqi Zhang , Ziqian Sheng , Shenglong Wei , Yihong Chen , Wenjing Xu , Ye Yang , Duanyang Chen , Hongji Qi , Kelvin H.L. Zhang
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引用次数: 0

摘要

在这项工作中,我们报告了通过分子束外延(MBE)技术生长的无意掺杂(UID)和掺锡的β-Ga2O3同外延薄膜的输运、缺陷态和电子结构特性,其电子密度范围为 2.1 × 1016 至 2.8 × 1019 cm-3。电子密度为 2.1 × 1016 cm-3 的 UID 薄膜的实时迁移率高达 129 cm2/Vs,在 80 K 时的峰值迁移率为 900 cm2/Vs,达到了 MBE 生长的 Ga2O3 薄膜的最新水平。与温度相关的霍尔测量显示,锡掺杂剂的活化能为 56.7 meV。同步辐射光发射光谱被进一步用于研究掺入锡后电子特性的演变。在掺杂了锡的 Ga2O3 薄膜价带最大值上方 1.5 eV 处观察到一个内隙缺陷态。隙内缺陷态作为自补偿中心影响着整体掺杂效率和迁移率。此外,光发射光谱研究还揭示了掺杂锡的 Ga2O3 薄膜表面区域存在向上的表面带弯曲。内隙态和表面向上带弯曲的确定对于理解 Ga2O3 的掺杂机制及其电子器件应用具有重要意义。
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Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped β-Ga2O3 homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 1016 to 2.8 × 1019 cm−3. The UID film with an electron density of 2.1 × 1016 cm−3 exhibits a notable RT mobility of 129 cm2/Vs and a peak mobility of 900 cm2/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga2O3 films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga2O3 film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga2O3 films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga2O3 and its electronic device applications.
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来源期刊
Materials Today Physics
Materials Today Physics Materials Science-General Materials Science
CiteScore
14.00
自引率
7.80%
发文量
284
审稿时长
15 days
期刊介绍: Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.
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