{"title":"电子辐照 beta-Ga2O3 中缺陷的光致发光研究","authors":"Yufei Zhang, Jing Li, Zunpeng Xiao, Gangyuan Jia, Kaiyue Wang, Zhenxing Qin, Junlin Li","doi":"10.1063/5.0215216","DOIUrl":null,"url":null,"abstract":"Research on the defects of β-Ga2O3 is the first step toward its application in high-end fields. However, there is still controversy over which defect structure is the origin of the 660–850 nm (near-infrared) photoluminescence (PL) band. The low-temperature PL spectrum was employed to study the PL properties of the 660–850 nm band. In addition, the intrinsic defects were artificially introduced into the (100) plane β-Ga2O3 crystal by electron irradiation, resulting in significant enhancement of the 660–850 nm band. Deconvolution fitting analysis combined with lattice relaxation theory indicated that the band was caused by both zero and single or multiple phonon transitions. According to the crystal structure and formation energy simulation, it was considered that the 660–850 nm PL band was related to oxygen vacancies at the three equivalent positions in the lattice.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of photoluminescence from defects in electron-irradiated beta-Ga2O3\",\"authors\":\"Yufei Zhang, Jing Li, Zunpeng Xiao, Gangyuan Jia, Kaiyue Wang, Zhenxing Qin, Junlin Li\",\"doi\":\"10.1063/5.0215216\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Research on the defects of β-Ga2O3 is the first step toward its application in high-end fields. However, there is still controversy over which defect structure is the origin of the 660–850 nm (near-infrared) photoluminescence (PL) band. The low-temperature PL spectrum was employed to study the PL properties of the 660–850 nm band. In addition, the intrinsic defects were artificially introduced into the (100) plane β-Ga2O3 crystal by electron irradiation, resulting in significant enhancement of the 660–850 nm band. Deconvolution fitting analysis combined with lattice relaxation theory indicated that the band was caused by both zero and single or multiple phonon transitions. According to the crystal structure and formation energy simulation, it was considered that the 660–850 nm PL band was related to oxygen vacancies at the three equivalent positions in the lattice.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0215216\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0215216","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Study of photoluminescence from defects in electron-irradiated beta-Ga2O3
Research on the defects of β-Ga2O3 is the first step toward its application in high-end fields. However, there is still controversy over which defect structure is the origin of the 660–850 nm (near-infrared) photoluminescence (PL) band. The low-temperature PL spectrum was employed to study the PL properties of the 660–850 nm band. In addition, the intrinsic defects were artificially introduced into the (100) plane β-Ga2O3 crystal by electron irradiation, resulting in significant enhancement of the 660–850 nm band. Deconvolution fitting analysis combined with lattice relaxation theory indicated that the band was caused by both zero and single or multiple phonon transitions. According to the crystal structure and formation energy simulation, it was considered that the 660–850 nm PL band was related to oxygen vacancies at the three equivalent positions in the lattice.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.