半导体带隙的蒙特卡洛显式相关二阶多体格林函数计算

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-09-28 DOI:10.1021/acs.jpcc.4c03848
J. César Cruz, So Hirata
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引用次数: 0

摘要

我们需要一系列系统收敛的原子序数、后密度函数、尺寸一致、电子相关的近似方法,用于绝缘、半导体和金属固体电子能带结构的预测计算。基于高斯型轨道 (GTO) 基集的非初始多体格林函数理论系列满足了所有这些要求(除了对金属的适用性)。在此,我们利用群集模型,将其前沿近似方法,即对角线近似和频率无关近似的二阶格林函数 (GF2) 方法,应用于三种半导体(金刚石、硅和锌蓝晶石结构的碳化硅)的基本带隙。通过价带边的显式相关(F12)方差(GF2-F12)对基带集的不完整性误差进行了修正。晶体被建模为尺寸不断增大的表面钝化簇,其波函数由多达 2709 个 GTO 基函数展开。蒙特卡洛 GF2-F12 方法的随机算法具有高度可扩展性,每个状态的运算成本仅为系统规模的立方幂,内存占用极小,可在数千个 CPU 或数百个 GPU 上轻松实现近乎完美的并行效率。与大块金刚石的基本(间接)带隙 5.48 eV 的实验值相比,C87H76 的相关、F12 校正最高占有和最低未占有分子轨道能(HOMO-LUMO)隙为 5.78 ± 0.07 eV。Si75H76 和 Si32C43H76 的相关 F12 校正 HOMO-LUMO 间隙分别为 2.56 ± 0.15 和 3.50 ± 0.12 eV,预计随着簇尺寸的增大会进一步减小。大块硅和碳化硅的实验基本(间接)带隙分别为 1.17 和 2.42 eV。
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Monte Carlo Explicitly Correlated Second-Order Many-Body Green’s Function Calculations of Semiconductor Band Gaps
A systematically converging series of ab initio, postdensity functional, size-consistent, electron-correlated approximations is desired for predictive computing of electronic band structures of insulating, semiconducting, and metallic solids. A series that meets all of these desiderata (except the applicability to metals) is ab initio many-body Green’s function theory based on Gaussian-type orbital (GTO) basis sets. Here, its leading-order approximation, the second-order Green’s function (GF2) method in the diagonal and frequency-independent approximations with the aug-cc-pVDZ basis set, is applied to the fundamental band gaps of three semiconductors (diamond, silicon, and silicon carbide in the zincblende structure) using cluster models. Corrections are made to the basis set incompleteness errors by the explicit correlation (F12) ansatz (GF2-F12) for the valence band edges. The crystals are modeled as surface-passivated clusters of increasing sizes, whose wave functions are expanded by up to 2709 GTO basis functions. Immense computational costs of these calculations are overcome by the highly scalable stochastic algorithm of the Monte Carlo GF2-F12 method, whose operation cost per state increases only as a cubic power of system size, which has a tiny memory footprint and easily achieves near-perfect parallel efficiency on thousands of CPUs or on hundreds of GPUs. The correlated, F12-corrected highest-occupied and lowest-unoccupied molecular orbital energy (HOMO–LUMO) gap is 5.78 ± 0.07 eV for C87H76 as compared with the experimental value of the fundamental (indirect) band gap of bulk diamond at 5.48 eV. The correlated, F12-corrected HOMO–LUMO gaps for Si75H76 and Si32C43H76 are 2.56 ± 0.15 and 3.50 ± 0.12 eV, respectively, which are expected to decrease further with increasing cluster sizes. The experimental fundamental (indirect) band gaps of bulk silicon and silicon carbide are 1.17 and 2.42 eV, respectively.
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