{"title":"C2X 功能化 III-V 族单层材料的稳健拓扑绝缘特性。","authors":"Xianghong Xue, Zhihua Lin, Rui Gao, Bingzhuo Yang, Haoyu Wang, Mengmeng Han, Nannan Han","doi":"10.1088/1361-6528/ad8098","DOIUrl":null,"url":null,"abstract":"<p><p>Two-dimensional topological insulators (TIs) show great potential applications in low-power quantum computing and spintronics due to the spin-polarized gapless edge states. However, the small bandgap limits their room-temperature applications. Based on first-principles calculations, a series of C<sub>2</sub>X (X = H, F, Cl, Br and I) functionalized III-V monolayers are investigated. The nontrivial bandgaps of GaBi-(C<sub>2</sub>X)<sub>2</sub>, InBi-(C<sub>2</sub>X)<sub>2</sub>, TlBi-(C<sub>2</sub>X)<sub>2</sub>and TlSb-(C<sub>2</sub>X)<sub>2</sub>are found to between 0.223 and 0.807 eV. For GaBi-(C<sub>2</sub>X)<sub>2</sub>and InBi-(C<sub>2</sub>X)<sub>2</sub>, the topological insulating properties originate from the<i>s-px,y</i>band inversion induced by the spin-orbital coupling (SOC) effect. While for TlBi-(C<sub>2</sub>X)<sub>2</sub>and TlSb-(C<sub>2</sub>X)<sub>2</sub>, the topological insulating properties are attributed to the SOC effect-induced band splitting. The robust topological characteristics are further confirmed by topological invariants<i>Z</i><sub>2</sub>and the test under biaxial strain. Finally, two ideal substrates are predicted to promote the applications of these TIs. These findings indicate that GaBi-(C<sub>2</sub>X)<sub>2</sub>, InBi-(C<sub>2</sub>X)<sub>2</sub>, TlBi-(C<sub>2</sub>X)<sub>2</sub>and TlSb-(C<sub>2</sub>X)<sub>2</sub>monolayers are good candidates for the fabrication of spintronic devices.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Robust topological insulating property in C<sub>2</sub>X-functionalized III-V monolayers.\",\"authors\":\"Xianghong Xue, Zhihua Lin, Rui Gao, Bingzhuo Yang, Haoyu Wang, Mengmeng Han, Nannan Han\",\"doi\":\"10.1088/1361-6528/ad8098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Two-dimensional topological insulators (TIs) show great potential applications in low-power quantum computing and spintronics due to the spin-polarized gapless edge states. However, the small bandgap limits their room-temperature applications. Based on first-principles calculations, a series of C<sub>2</sub>X (X = H, F, Cl, Br and I) functionalized III-V monolayers are investigated. The nontrivial bandgaps of GaBi-(C<sub>2</sub>X)<sub>2</sub>, InBi-(C<sub>2</sub>X)<sub>2</sub>, TlBi-(C<sub>2</sub>X)<sub>2</sub>and TlSb-(C<sub>2</sub>X)<sub>2</sub>are found to between 0.223 and 0.807 eV. For GaBi-(C<sub>2</sub>X)<sub>2</sub>and InBi-(C<sub>2</sub>X)<sub>2</sub>, the topological insulating properties originate from the<i>s-px,y</i>band inversion induced by the spin-orbital coupling (SOC) effect. While for TlBi-(C<sub>2</sub>X)<sub>2</sub>and TlSb-(C<sub>2</sub>X)<sub>2</sub>, the topological insulating properties are attributed to the SOC effect-induced band splitting. The robust topological characteristics are further confirmed by topological invariants<i>Z</i><sub>2</sub>and the test under biaxial strain. Finally, two ideal substrates are predicted to promote the applications of these TIs. These findings indicate that GaBi-(C<sub>2</sub>X)<sub>2</sub>, InBi-(C<sub>2</sub>X)<sub>2</sub>, TlBi-(C<sub>2</sub>X)<sub>2</sub>and TlSb-(C<sub>2</sub>X)<sub>2</sub>monolayers are good candidates for the fabrication of spintronic devices.</p>\",\"PeriodicalId\":19035,\"journal\":{\"name\":\"Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6528/ad8098\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ad8098","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Robust topological insulating property in C2X-functionalized III-V monolayers.
Two-dimensional topological insulators (TIs) show great potential applications in low-power quantum computing and spintronics due to the spin-polarized gapless edge states. However, the small bandgap limits their room-temperature applications. Based on first-principles calculations, a series of C2X (X = H, F, Cl, Br and I) functionalized III-V monolayers are investigated. The nontrivial bandgaps of GaBi-(C2X)2, InBi-(C2X)2, TlBi-(C2X)2and TlSb-(C2X)2are found to between 0.223 and 0.807 eV. For GaBi-(C2X)2and InBi-(C2X)2, the topological insulating properties originate from thes-px,yband inversion induced by the spin-orbital coupling (SOC) effect. While for TlBi-(C2X)2and TlSb-(C2X)2, the topological insulating properties are attributed to the SOC effect-induced band splitting. The robust topological characteristics are further confirmed by topological invariantsZ2and the test under biaxial strain. Finally, two ideal substrates are predicted to promote the applications of these TIs. These findings indicate that GaBi-(C2X)2, InBi-(C2X)2, TlBi-(C2X)2and TlSb-(C2X)2monolayers are good candidates for the fabrication of spintronic devices.
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The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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