基于多层异质结的氧化锌纳米针/聚苯胺/钛纳米粒子作为自供电紫外光光电探测器

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-09-27 DOI:10.1016/j.sna.2024.115931

Shahruz Nasirian, Fatemeh Sarouzeh Rostami, Fatemeh Zahra Moradtabar Azizi

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引用次数: 0

摘要

如今，具有更好光响应特性的自供电紫外线光电探测器（SPD）在军事和民用领域的应用举足轻重，因而备受关注。在本研究中，我们首次研究并报告了基于多层异质结氧化锌纳米针/聚苯胺/钛纳米颗粒（ZET）的 SPD 的构造和光响应特性。研究人员全面考察了 ZET 及其组分的结构、形态和光学特性。观察到基于 ZET 的 SPD（SPZ）的 I-V 特性变化与温度变化之间存在明显的依赖关系，从而产生了较短的反向饱和电流、适当的理想因子和较低的暗电流。SPZ 的 I-V 特性显示出非线性不对称整流行为，在紫外线（UV）照射的影响和功率密度（PDiss）增加的情况下，电流得到改善。此外，在零偏置电压的紫外光照射下，SPZ 还能产生短路电流和显著的对比度，从而证实了它的自供电特性。在 0.77 mW/cm2 的 PDis 下，该器件显示出 4.46 A/W 的出色光致发光率、63.1×1012 Jones 的高显著归一化检测率、50.64 % 的良好填充因子和 1514 % 的出色外部量子效率。此外，SPZ 的上升时间短至 540 ms，最大光电流高达 99.9 µA，在 19.11 mW/cm2 的 PDis 下，增益动态范围高达 499.5。最后，通过标准热释电发射-扩散模型和能带图，详细讨论了我们的手工器件中电流产生的可能机制。

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Multilayered heterojunction-based zinc oxide nanoneedles/polyaniline/titania nanoparticles as a self-powered ultraviolet light photodetector

Nowadays, self-powered ultraviolet photodetectors (SPDs) with improved photoresponse features have attracted considerable attention due to their great pivotal applications in military and civilian ﬁelds. In the present work, for the first time, we investigate and report the construction and photoresponse features of a SPD based on multilayered heterojunction-based zinc oxide nanoneedles/polyaniline/titania nanoparticles (ZET). The structure, morphology, and optical properties of the ZET and its components were comprehensively investigated. A significant dependence was observed between the changes in I-V characteristics of the ZET-based SPD (SPZ) and the temperature change, resulting in a short reverse saturation current, proper ideality factor, and low dark current. I-V characteristics of the SPZ revealed nonlinear asymmetric rectifying behavior with the improved current under the influence and increase of power densities (P_Diss) of ultraviolet (UV) light irradiation. Moreover, the self-powered feature of the SPZ was confirmed by the generation of short-circuit current and notable contrast ratio under UV light illumination at zero bias voltage. The device displayed remarkable photoresponsivity of 4.46 A/W, high significant normalized detectivity of 63.1×10¹² Jones, good fill factor of 50.64 %, and excellent external quantum efficiency of 1514 % at the P_Dis of 0.77 mW/cm². In addition, the SPZ exposed a short rise time of 540 ms, a high maximum photocurrent of 99.9 µA, and a significant gain dynamic range of 499.5 at P_Dis of 19.11 mW/cm². Finally, the imaginable mechanism of the current generation in our hand-made device was discussed in detail by exerting a standard thermionic emission-diffusion model and energy band diagram.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...