{"title":"基于悬浮 Y2O3/TiN 灯丝的晶圆级制造片上热离子电子源","authors":"Weidong Rao;Zhiwei Li;Dengzhu Guo;Yang Li;Taoyuan Zhu;Xianlong Wei","doi":"10.1109/LED.2024.3446637","DOIUrl":null,"url":null,"abstract":"On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y\n<sub>2</sub>\nO\n<sub>3</sub>\n/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y\n<sub>2</sub>\nO\n<sub>3</sub>\n, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm\n<sup>2</sup>\n at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1977-1980"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wafer-Scale Fabricated On-Chip Thermionic Electron Sources Based on a Suspended Y2O3/TiN Filament\",\"authors\":\"Weidong Rao;Zhiwei Li;Dengzhu Guo;Yang Li;Taoyuan Zhu;Xianlong Wei\",\"doi\":\"10.1109/LED.2024.3446637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y\\n<sub>2</sub>\\nO\\n<sub>3</sub>\\n/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y\\n<sub>2</sub>\\nO\\n<sub>3</sub>\\n, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm\\n<sup>2</sup>\\n at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 10\",\"pages\":\"1977-1980\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10640137/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10640137/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
片上电子发射源是开发微型集成片上真空电子器件所不可或缺的。本文报告了一种基于悬浮 Y2O3/TiN 灯丝热电子发射的新型片上电子源。这些热离子电子源是通过微加工技术在硅晶片上批量制造的。得益于 Y2O3 的低功函数，我们的片上热离子源在温度仅为 1990 K 时的发射电流高达 1 mA，发射密度高达 19.3 A/cm2，远低于之前报道的具有类似发射性能的 W 和碳纳米材料灯丝片上热离子源。
Wafer-Scale Fabricated On-Chip Thermionic Electron Sources Based on a Suspended Y2O3/TiN Filament
On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y
2
O
3
/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y
2
O
3
, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm
2
at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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