Front Cover: Trends in the Reactivity of Pentacyclic Ether Derivatives on Silicon and Germanium Surfaces Revealed by Energy Decomposition Analysis for Extended Systems (Eur. J. Org. Chem. 37/2024)

The Front Cover illustrates the S_N2-like ring-opening reactions of THF derivatives with the chalcogen elements O, S, Se and Te on both Si(001) and Ge(001) surfaces. The periodic table at the back embodies the trends presented in the work. On the left, the deformation density of the first NOCV in the THF precursor structure showcases the charge transfer towards the surface. The across-trench product of the tellurium derivative is shown on the right. The center features the across-trench transition state geometry of THSe with a deformation density indicating an S_N2-like reaction. More information can be found in the Research Article by R. Tonner-Zech and co-workers (DOI: 10.1002/ejoc.202400560).