Felix Risch, Ali Gilani, Sadegh Kamaei, Adrian M. Ionescu, Igor Stolichnov
{"title":"石墨烯增强型铁电畴壁高输出忆阻器","authors":"Felix Risch, Ali Gilani, Sadegh Kamaei, Adrian M. Ionescu, Igor Stolichnov","doi":"10.1063/5.0232620","DOIUrl":null,"url":null,"abstract":"Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especially promising, offering conductive tunability suitable for reconfigurable multi-state devices. However, challenges such as domain stability, time-dependent conductivity, and low current output have impeded progress in the field. Here, we study the graphene/Pb(Zr,Ti)O3/SrRuO3 system, which demonstrates robust domain wall conduction up to 100 nA/μm2 for 2 V bias, while addressing the critical issue of stability of switched domains. The introduction of graphene electrodes enhances low-voltage stochastic domain formation with limited domain expansion that promotes the emergence of multi-domain states. The developed micrometer sized capacitor devices enable electrically programmable multiple distinct conduction states with robust retention combined with high current output and low operation voltage. These features are highly desirable for memristors and mark the significant potential of domain wall electronics for neuromorphic computing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Graphene-enhanced ferroelectric domain wall high-output memristor\",\"authors\":\"Felix Risch, Ali Gilani, Sadegh Kamaei, Adrian M. Ionescu, Igor Stolichnov\",\"doi\":\"10.1063/5.0232620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especially promising, offering conductive tunability suitable for reconfigurable multi-state devices. However, challenges such as domain stability, time-dependent conductivity, and low current output have impeded progress in the field. Here, we study the graphene/Pb(Zr,Ti)O3/SrRuO3 system, which demonstrates robust domain wall conduction up to 100 nA/μm2 for 2 V bias, while addressing the critical issue of stability of switched domains. The introduction of graphene electrodes enhances low-voltage stochastic domain formation with limited domain expansion that promotes the emergence of multi-domain states. The developed micrometer sized capacitor devices enable electrically programmable multiple distinct conduction states with robust retention combined with high current output and low operation voltage. These features are highly desirable for memristors and mark the significant potential of domain wall electronics for neuromorphic computing.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0232620\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0232620","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
近期对记忆材料和技术的研究已经超越了传统的记忆元件,因为它们有可能应用于新的信息处理概念。在这些材料中,铁氧体中的导电畴壁尤其具有发展前景,可提供适合可重构多态器件的导电可调性。然而,畴稳定性、随时间变化的导电性和低电流输出等挑战阻碍了该领域的进展。在这里,我们研究了石墨烯/铅(Zr,Ti)O3/SrRuO3 系统,该系统在 2 V 偏压条件下可实现高达 100 nA/μm2 的稳健畴壁传导,同时解决了开关畴稳定性这一关键问题。石墨烯电极的引入增强了低压随机畴的形成,有限的畴扩展促进了多畴状态的出现。所开发的微米级电容器器件可实现电气可编程的多种截然不同的传导状态,并具有高电流输出和低工作电压的稳健保持特性。这些特性对于忆阻器来说非常理想,标志着畴壁电子学在神经形态计算领域的巨大潜力。
Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especially promising, offering conductive tunability suitable for reconfigurable multi-state devices. However, challenges such as domain stability, time-dependent conductivity, and low current output have impeded progress in the field. Here, we study the graphene/Pb(Zr,Ti)O3/SrRuO3 system, which demonstrates robust domain wall conduction up to 100 nA/μm2 for 2 V bias, while addressing the critical issue of stability of switched domains. The introduction of graphene electrodes enhances low-voltage stochastic domain formation with limited domain expansion that promotes the emergence of multi-domain states. The developed micrometer sized capacitor devices enable electrically programmable multiple distinct conduction states with robust retention combined with high current output and low operation voltage. These features are highly desirable for memristors and mark the significant potential of domain wall electronics for neuromorphic computing.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.