基于变压器的 48-63 GHz 3-dB 紧凑型正交耦合器,采用 22-nm CMOS FDSOI,具有任意变压器耦合系数

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-08-21 DOI:10.1109/LMWT.2024.3443771
Basem Abdelaziz Abdelmagid;Hua Wang
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引用次数: 0

摘要

本文介绍了一种新型 3 分贝变压器正交耦合器(TFQC),它基于连接在耦合器端口之间的叠加电感器。与之前报道的严格要求耦合系数(k)为 0.707 的 3 分贝 TFQC 相比,所提出的耦合器可以设计为任意 k 的变压器(TF),从而大大扩展了设计空间,并具有跨频率和不同技术的可扩展性。此外,与以前的 TFQC 设计相比,拟议耦合器所需的变压器电感降低了,从而进一步缩小了尺寸。为验证所提耦合器的理论,采用 22 纳米 CMOS FDSOI 技术实现了 48-63 GHz 原型,占地面积为 0.017 mm2,平均插入损耗 (IL) 为 1.81 dB。
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A Compact 48–63 GHz 3-dB Transformer-Based Quadrature Coupler With Arbitrary Transformer Coupling Coefficient in 22-nm CMOS FDSOI
This letter presents a novel 3-dB transformer-based quadrature coupler (TFQC) that is based on lumped inductors connected between the coupler ports. Compared to previously reported 3-dB TFQCs that strictly require a coupling coefficient (k) of 0.707, the proposed coupler can be designed with any arbitrary k for the transformer (TF), offering a much-expanded design space and scalability across frequency and different technologies. In addition, the required TF’s inductance of the proposed coupler is reduced compared to previous TFQC designs, allowing for a further size reduction. To validate the theory of the proposed coupler, a 48–63 GHz prototype is implemented in a 22-nm CMOS FDSOI technology, occupying an area of 0.017 mm2 with an average insertion loss (IL) of 1.81 dB.
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