{"title":"用于谐波抑制的高效推挽并联电路 E/F3 类功率放大器","authors":"Heng Lu;Jianliang Jiang;Hengli Zhang","doi":"10.1109/LMWT.2024.3442206","DOIUrl":null,"url":null,"abstract":"In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (\n<inline-formula> <tex-math>${P} _{\\text {out}}$ </tex-math></inline-formula>\n) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"1170-1173"},"PeriodicalIF":0.0000,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Efficiency Push–Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression\",\"authors\":\"Heng Lu;Jianliang Jiang;Hengli Zhang\",\"doi\":\"10.1109/LMWT.2024.3442206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (\\n<inline-formula> <tex-math>${P} _{\\\\text {out}}$ </tex-math></inline-formula>\\n) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 10\",\"pages\":\"1170-1173\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10642993/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10642993/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A High-Efficiency Push–Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression
In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (
${P} _{\text {out}}$
) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.