用于谐波抑制的高效推挽并联电路 E/F3 类功率放大器

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-08-20 DOI:10.1109/LMWT.2024.3442206
Heng Lu;Jianliang Jiang;Hengli Zhang
{"title":"用于谐波抑制的高效推挽并联电路 E/F3 类功率放大器","authors":"Heng Lu;Jianliang Jiang;Hengli Zhang","doi":"10.1109/LMWT.2024.3442206","DOIUrl":null,"url":null,"abstract":"In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (\n<inline-formula> <tex-math>${P} _{\\text {out}}$ </tex-math></inline-formula>\n) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"1170-1173"},"PeriodicalIF":0.0000,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Efficiency Push–Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression\",\"authors\":\"Heng Lu;Jianliang Jiang;Hengli Zhang\",\"doi\":\"10.1109/LMWT.2024.3442206\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (\\n<inline-formula> <tex-math>${P} _{\\\\text {out}}$ </tex-math></inline-formula>\\n) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 10\",\"pages\":\"1170-1173\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10642993/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10642993/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种带有谐波抑制网络的高效推挽并联电路(PC)E/F3 类功率放大器(PA),适用于射频识别(RFID)应用。通过双电抗补偿技术(D-RCT),实现了功率放大器的宽带性能设计。此外,还引入了低通 (LP) 切比雪夫技术,以提供一个简单的基波匹配网络 (MN)。最后,制作并测量了高效推挽式 PC Class-E/F3 功率放大器。实验结果表明,在 5 至 10.5 MHz 频率范围内,输出功率(${P} _{text {out}}$ )为 36.83 至 41.84 dBm,漏极效率(DE)为 82.35% 至 91.32%,与仿真结果非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A High-Efficiency Push–Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression
In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power ( ${P} _{\text {out}}$ ) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
6.00
自引率
0.00%
发文量
0
期刊最新文献
Table of Contents IEEE Open Access Publishing IEEE Microwave and Wireless Technology Letters publication IEEE Microwave and Wireless Technology Letters Information for Authors TechRxiv: Share Your Preprint Research with the World
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1