A. S. Rudy, A. B. Churilov, S. V. Kurbatov, A. A. Mironrenko, V. V. Naumov, E. A. Kozlov
{"title":"确定 Si@O@Al 纳米复合材料的带状结构和电导率","authors":"A. S. Rudy, A. B. Churilov, S. V. Kurbatov, A. A. Mironrenko, V. V. Naumov, E. A. Kozlov","doi":"10.1134/S1063784224060379","DOIUrl":null,"url":null,"abstract":"<p>The purpose of this work is to study the characteristics of the junction between the titanium down conductor of a thin-film solid-state lithium-ion battery (<i>a</i>-Si) and a negative Si@O@Al nanocomposite electrode. The results of measuring the band gap of the Si@O@Al nanocomposite and the height of the Schottky barrier of the Ti–Si@O@Al junction are presented. The transmission and reflection spectra of Si@O@Al films and its main phases <i>a</i>-Si, <i>a</i>-SiO<sub><i>x</i></sub>, and <i>a</i>-Si(Al<sub><i>x</i></sub>) are studied. The band gap of Si@O@Al was determined by the Tauc method, which is 1.52 eV for <i>a</i>-Si and 1.15 eV for nc-Si. The IV characteristics of Ti‒Si@O@Al, Ti–<i>a</i>-Si, Ti–<i>a</i>-SiO<sub>0.8</sub>, and Ti–<i>a</i>-Si<sub>0.9</sub>(Al<sub>0.1</sub>) structures have been studied and the height of the Schottky barrier has been determined. The results obtained make it possible to estimate the Fermi energy of the nanocomposite and to interpret the hike in the SSLIB charging voltage as a result of the Al acceptor impurity compensation during lithiation. A change in the majority charge carriers in Si@O@Al leads to a decrease in the hole current and an increase in the density of the over-barrier electron current, as a result of which a step with a height of 1.5 V is formed on the charging curve.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1753 - 1764"},"PeriodicalIF":1.1000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of the Band Structure and Conductivity of the Si@O@Al Nanocomposite\",\"authors\":\"A. S. Rudy, A. B. Churilov, S. V. Kurbatov, A. A. Mironrenko, V. V. Naumov, E. A. Kozlov\",\"doi\":\"10.1134/S1063784224060379\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The purpose of this work is to study the characteristics of the junction between the titanium down conductor of a thin-film solid-state lithium-ion battery (<i>a</i>-Si) and a negative Si@O@Al nanocomposite electrode. The results of measuring the band gap of the Si@O@Al nanocomposite and the height of the Schottky barrier of the Ti–Si@O@Al junction are presented. The transmission and reflection spectra of Si@O@Al films and its main phases <i>a</i>-Si, <i>a</i>-SiO<sub><i>x</i></sub>, and <i>a</i>-Si(Al<sub><i>x</i></sub>) are studied. The band gap of Si@O@Al was determined by the Tauc method, which is 1.52 eV for <i>a</i>-Si and 1.15 eV for nc-Si. The IV characteristics of Ti‒Si@O@Al, Ti–<i>a</i>-Si, Ti–<i>a</i>-SiO<sub>0.8</sub>, and Ti–<i>a</i>-Si<sub>0.9</sub>(Al<sub>0.1</sub>) structures have been studied and the height of the Schottky barrier has been determined. The results obtained make it possible to estimate the Fermi energy of the nanocomposite and to interpret the hike in the SSLIB charging voltage as a result of the Al acceptor impurity compensation during lithiation. A change in the majority charge carriers in Si@O@Al leads to a decrease in the hole current and an increase in the density of the over-barrier electron current, as a result of which a step with a height of 1.5 V is formed on the charging curve.</p>\",\"PeriodicalId\":783,\"journal\":{\"name\":\"Technical Physics\",\"volume\":\"69 6\",\"pages\":\"1753 - 1764\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063784224060379\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063784224060379","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Determination of the Band Structure and Conductivity of the Si@O@Al Nanocomposite
The purpose of this work is to study the characteristics of the junction between the titanium down conductor of a thin-film solid-state lithium-ion battery (a-Si) and a negative Si@O@Al nanocomposite electrode. The results of measuring the band gap of the Si@O@Al nanocomposite and the height of the Schottky barrier of the Ti–Si@O@Al junction are presented. The transmission and reflection spectra of Si@O@Al films and its main phases a-Si, a-SiOx, and a-Si(Alx) are studied. The band gap of Si@O@Al was determined by the Tauc method, which is 1.52 eV for a-Si and 1.15 eV for nc-Si. The IV characteristics of Ti‒Si@O@Al, Ti–a-Si, Ti–a-SiO0.8, and Ti–a-Si0.9(Al0.1) structures have been studied and the height of the Schottky barrier has been determined. The results obtained make it possible to estimate the Fermi energy of the nanocomposite and to interpret the hike in the SSLIB charging voltage as a result of the Al acceptor impurity compensation during lithiation. A change in the majority charge carriers in Si@O@Al leads to a decrease in the hole current and an increase in the density of the over-barrier electron current, as a result of which a step with a height of 1.5 V is formed on the charging curve.
期刊介绍：
Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
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