Jian Gao , Huaicheng Zhou , Yangyang Lu , Honglin Zhang , Junhui Sun , Yang Wang , Linmao Qian , Chen Xiao , Bingjun Yu
{"title":"晶体各向异性依赖于机械化学去除砷化镓：纳米晶粒度实验和原子模拟","authors":"Jian Gao , Huaicheng Zhou , Yangyang Lu , Honglin Zhang , Junhui Sun , Yang Wang , Linmao Qian , Chen Xiao , Bingjun Yu","doi":"10.1016/j.triboint.2024.110286","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the nanoasperity wear tests on GaAs surfaces with different crystallographic orientations against SiO<sub>2</sub> microsphere were performed using AFM. The removal behavior characterized by in-situ AFM imaging significantly relies on crystallographic anisotropy (111 > 110 > 100). The atomic structure of worn area characterized by HRTEM shows perfect crystal lattice, demonstrating the dominate role of the interfacial mechanochemical reactions during the material removal of GaAs. DFT calculations were conducted and the results reveal that the charge re-distribution behavior at the SiO<sub>2</sub>/GaAs interface governs the mechanochemical reactions, essentially leading to the crystallographic anisotropy dependence. This study not only enriches the mechanochemical reaction mechanism, but also benefits for the CMP optimization for GaAs.</div></div>","PeriodicalId":23238,"journal":{"name":"Tribology International","volume":"202 ","pages":"Article 110286"},"PeriodicalIF":6.1000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Crystallographic anisotropy-dependent mechanochemical removal of GaAs: Nanoasperity experiments and atomistic simulations\",\"authors\":\"Jian Gao , Huaicheng Zhou , Yangyang Lu , Honglin Zhang , Junhui Sun , Yang Wang , Linmao Qian , Chen Xiao , Bingjun Yu\",\"doi\":\"10.1016/j.triboint.2024.110286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this paper, the nanoasperity wear tests on GaAs surfaces with different crystallographic orientations against SiO<sub>2</sub> microsphere were performed using AFM. The removal behavior characterized by in-situ AFM imaging significantly relies on crystallographic anisotropy (111 > 110 > 100). The atomic structure of worn area characterized by HRTEM shows perfect crystal lattice, demonstrating the dominate role of the interfacial mechanochemical reactions during the material removal of GaAs. DFT calculations were conducted and the results reveal that the charge re-distribution behavior at the SiO<sub>2</sub>/GaAs interface governs the mechanochemical reactions, essentially leading to the crystallographic anisotropy dependence. This study not only enriches the mechanochemical reaction mechanism, but also benefits for the CMP optimization for GaAs.</div></div>\",\"PeriodicalId\":23238,\"journal\":{\"name\":\"Tribology International\",\"volume\":\"202 \",\"pages\":\"Article 110286\"},\"PeriodicalIF\":6.1000,\"publicationDate\":\"2024-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Tribology International\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0301679X24010387\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, MECHANICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tribology International","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0301679X24010387","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}
Crystallographic anisotropy-dependent mechanochemical removal of GaAs: Nanoasperity experiments and atomistic simulations
In this paper, the nanoasperity wear tests on GaAs surfaces with different crystallographic orientations against SiO2 microsphere were performed using AFM. The removal behavior characterized by in-situ AFM imaging significantly relies on crystallographic anisotropy (111 > 110 > 100). The atomic structure of worn area characterized by HRTEM shows perfect crystal lattice, demonstrating the dominate role of the interfacial mechanochemical reactions during the material removal of GaAs. DFT calculations were conducted and the results reveal that the charge re-distribution behavior at the SiO2/GaAs interface governs the mechanochemical reactions, essentially leading to the crystallographic anisotropy dependence. This study not only enriches the mechanochemical reaction mechanism, but also benefits for the CMP optimization for GaAs.
期刊介绍：
Tribology is the science of rubbing surfaces and contributes to every facet of our everyday life, from live cell friction to engine lubrication and seismology. As such tribology is truly multidisciplinary and this extraordinary breadth of scientific interest is reflected in the scope of Tribology International.
Tribology International seeks to publish original research papers of the highest scientific quality to provide an archival resource for scientists from all backgrounds. Written contributions are invited reporting experimental and modelling studies both in established areas of tribology and emerging fields. Scientific topics include the physics or chemistry of tribo-surfaces, bio-tribology, surface engineering and materials, contact mechanics, nano-tribology, lubricants and hydrodynamic lubrication.
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