{"title":"含氮单晶金刚石薄膜的介电行为和缺陷","authors":"","doi":"10.1016/j.diamond.2024.111642","DOIUrl":null,"url":null,"abstract":"<div><div>Single crystal diamond (SCD) film, as a new substrate material, has attracted growing attention because of its low dielectric loss. The nitrogen was usually introduced into microwave plasma chemical vapor deposition (MPCVD) process in order to enhance the growth rate of SCD films. So SCD films with nitrogen were prepared by MPCVD compared with the undoped film. The impurities and defects of diamond films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL). The dielectric behavior of SCD films was measured using the LCR measurement in the frequency range of 1 kHz to 110 MHz. The results indicate that the primary dielectric loss in SCD films is conductivity loss and space charge polarization below 1 MHz, while the main dielectric loss is dipole orientation polarization and electronic relaxation polarization in the frequency range of 1 MHz to 110 MHz. Point defects like substitutional N<sup>+</sup>, NV<sup>−</sup> and SiV<sup>−</sup> exert a significant influence on polarization loss. This is essential to improve the growth of SCD with excellent dielectric properties.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric behavior and defects of nitrogen-containing single crystal diamond films\",\"authors\":\"\",\"doi\":\"10.1016/j.diamond.2024.111642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Single crystal diamond (SCD) film, as a new substrate material, has attracted growing attention because of its low dielectric loss. The nitrogen was usually introduced into microwave plasma chemical vapor deposition (MPCVD) process in order to enhance the growth rate of SCD films. So SCD films with nitrogen were prepared by MPCVD compared with the undoped film. The impurities and defects of diamond films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL). The dielectric behavior of SCD films was measured using the LCR measurement in the frequency range of 1 kHz to 110 MHz. The results indicate that the primary dielectric loss in SCD films is conductivity loss and space charge polarization below 1 MHz, while the main dielectric loss is dipole orientation polarization and electronic relaxation polarization in the frequency range of 1 MHz to 110 MHz. Point defects like substitutional N<sup>+</sup>, NV<sup>−</sup> and SiV<sup>−</sup> exert a significant influence on polarization loss. This is essential to improve the growth of SCD with excellent dielectric properties.</div></div>\",\"PeriodicalId\":11266,\"journal\":{\"name\":\"Diamond and Related Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Diamond and Related Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925963524008550\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963524008550","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
Dielectric behavior and defects of nitrogen-containing single crystal diamond films
Single crystal diamond (SCD) film, as a new substrate material, has attracted growing attention because of its low dielectric loss. The nitrogen was usually introduced into microwave plasma chemical vapor deposition (MPCVD) process in order to enhance the growth rate of SCD films. So SCD films with nitrogen were prepared by MPCVD compared with the undoped film. The impurities and defects of diamond films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL). The dielectric behavior of SCD films was measured using the LCR measurement in the frequency range of 1 kHz to 110 MHz. The results indicate that the primary dielectric loss in SCD films is conductivity loss and space charge polarization below 1 MHz, while the main dielectric loss is dipole orientation polarization and electronic relaxation polarization in the frequency range of 1 MHz to 110 MHz. Point defects like substitutional N+, NV− and SiV− exert a significant influence on polarization loss. This is essential to improve the growth of SCD with excellent dielectric properties.
期刊介绍:
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.