{"title":"具有可变电阻的基于 LiNbO3 的铁电隧道结用于数据存储","authors":"","doi":"10.1016/j.physb.2024.416604","DOIUrl":null,"url":null,"abstract":"<div><div>Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next-generation data storage technologies. In this work, we have grown high-quality LiNbO<sub>3</sub> single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO<sub>3</sub> films. Then, the Au/LiNbO<sub>3</sub>/Nb: SrTiO<sub>3</sub> FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO<sub>3</sub>/Nb: SrTiO<sub>3</sub> FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 10<sup>3</sup>. Furthermore, the FTJs also exhibit excellent retention for more than 10<sup>3</sup> s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO<sub>3</sub>-based FTJ for next generation nonvolatile ferroelectric memories.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"LiNbO3-based ferroelectric tunnel junctions with changeable electroresistance for data storage\",\"authors\":\"\",\"doi\":\"10.1016/j.physb.2024.416604\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next-generation data storage technologies. In this work, we have grown high-quality LiNbO<sub>3</sub> single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO<sub>3</sub> films. Then, the Au/LiNbO<sub>3</sub>/Nb: SrTiO<sub>3</sub> FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO<sub>3</sub>/Nb: SrTiO<sub>3</sub> FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 10<sup>3</sup>. Furthermore, the FTJs also exhibit excellent retention for more than 10<sup>3</sup> s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO<sub>3</sub>-based FTJ for next generation nonvolatile ferroelectric memories.</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452624009451\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624009451","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
LiNbO3-based ferroelectric tunnel junctions with changeable electroresistance for data storage
Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next-generation data storage technologies. In this work, we have grown high-quality LiNbO3 single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO3 films. Then, the Au/LiNbO3/Nb: SrTiO3 FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO3/Nb: SrTiO3 FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 103. Furthermore, the FTJs also exhibit excellent retention for more than 103 s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO3-based FTJ for next generation nonvolatile ferroelectric memories.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces