Theoretical investigation of structural, mechanical, electronic, optical, and thermal properties of ternary compounds of heusler alloy ANiSn (A= TI, TH, U) using first principles calculations

In this study, we investigated the ANiSn (A = Ti, Th, U) half-Heusler materials for various properties, including structural, electronic, mechanical, elastic anisotropic, optical, and thermal properties, using Density Functional Theory (DFT) with the Cambridge Serial Total Energy Package (CASTEP) code. The elastic constants satisfied Born's criteria, confirming the thermodynamic and mechanical stability of the ANiSn compounds. Mechanical stability was further assessed through bulk modulus, shear modulus, and Poisson's ratio. Our analysis revealed that TiNiSn and ThNiSn exhibit ductile behaviour, whereas UNiSn is brittle. The calculated elastic modulus indicated that the compounds we studied are elastically anisotropic. The electronic and optical properties confirmed the semiconducting nature of these materials, with significant absorption and conductivity observed in the ultraviolet region. ANiSn is suitable for manufacturing various optoelectronic devices, such as laser diodes (LDs), photodetectors, LEDs, and UV sensors, due to its high absorption coefficient in the IR to UV regions. Additionally, measured Debye and melting temperatures confirmed that TiNiSn is more thermally conductive and can be used in high-temperature structural substances. The low minimum thermal conductivity suggests that UNiSn may be a more efficient material for thermal barrier coatings (TBC) compared to TiNiSn and ThNiSn.