单层 ScCl3 的高隔热性和出色的热稳定性:电子、声子、磁、热和光学特性的 DFT 研究

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-10-07 DOI:10.1016/j.mssp.2024.108981
Yousif Hussein Azeez , Bashdar Rahman Pirot , Nzar Rauf Abdullah , Vidar Gudmundsson
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引用次数: 0

摘要

通过 DFT 研究探讨了二维晶体结构形式的三卤化物材料三氯化钪(ScCl3)的结构、电子、声子、磁性、热和光学特性。使用 NVT 组合进行的 Ab-initio 分子动力学模拟(AIMD)证实了 ScCl3 极佳的热稳定性。我们的计算显示,SCl3 是一种稳定的半导体结构,其离子键带隙为 3.93eV (GGA) 和 6.27eV (HSE06)。我们在 ScCl3 中发现了费米能附近的平坦带。由于自旋配置平衡,自旋向上和向下的带隙和带结构都是相同的,表现出一种非磁性行为。声子能带结构的计算模式显示了动态稳定性,低频处的高声子态密度显示了对热振动的有效吸收,进一步增强了稳定性。此外,在较高温度下,熵和热容量的高原形状增加,表明在保持高效热能吸收的同时,向更无序的状态过渡。然而,低频声子群速度意味着材料内部热量传递迅速,导致晶格热导率随温度升高而降低。因此,SCl3 单层的晶格热导率非常小。最后,SCl3 对紫外线的反应以折射率和光导率的变化为特征,这表明它有可能应用于光电设备。
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High thermal insulation and excellent thermal stability of ScCl3 monolayer: DFT study of electronic, phonon, magnetic, thermal, and optical properties
The structural, electronic, phonon, magnetic, thermal, and optical properties of the trihalide material scandium trichloride, ScCl3, in the form of 2D crystal structure is investigated via DFT studies. Ab-initio molecular dynamic, AIMD, simulations using NVT ensembles confirm excellent thermal stability of ScCl3. Our calculations reveal that the ScCl3 is a stable semiconductor structure with band gap of 3.93eV (GGA) and 6.27eV (HSE06) with ionic bonds. We find flat bands in ScCl3 around the Fermi energy. The band gap and band structure are the same for both spin up and down exhibiting a non-magnetic behavior due to the balanced spin configurations. The calculated modes of the phonon band structure indicate dynamical stability, and the high phonon density of states at low frequencies displays efficient absorption of thermal vibrations further contributing to the stability. Additionally, the increased entropy and heat capacity plateau shape at higher temperatures regimes suggest a transition towards a more disordered state while maintaining efficient thermal energy absorption. However, the low-frequency phonon group velocities imply rapid heat transfer within the material leading to a decrease in lattice thermal conductivity with increasing temperature. Thus, a very small lattice thermal conductivity is seen for an ScCl3 monolayer. Finally, the response of ScCl3 to ultraviolet light, characterized by variations in the refractive index and optical conductivity, suggests potential applications in optoelectronic devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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