{"title":"通过共振峰和 Q 因子偏移制作多孔硅异质结构基体并对其进行光学表征,用于传感有机溶剂","authors":"","doi":"10.1016/j.sna.2024.115962","DOIUrl":null,"url":null,"abstract":"<div><div>Porous silicon heterostructures with an extensive photonic band gap, featuring a microcavity defect layer, have been successfully fabricated and applied as sensor devices for detecting organic solvent species. These sensors utilize both the resonance peak shift and the inverse Q-factor as sensing parameters. Similar to conventional porous silicon microcavities immersed in various organic solvents, the resonance peak exhibits a linear dependence on the solvent refractive index. However, in the proposed structure, the inverse Q-factor also displays a comparable linear trend with the refractive index, but with greater sensitivity to solvent mixtures. This increased sensitivity arises because the inverse Q-factor deviates from linearity when the prior solvent is not adequately removed from the porous structure before reflectance measurements — a condition not commonly detected by the resonance peak shift. To improve the performance of these sensors, the porous structures were passivated by thermal oxidation. For sensor applications, it is crucial that the contrast in the effective refractive index between the high and low porosity layers of the passivated structures be sufficiently large. Otherwise, when the porous matrix is immersed in solvents, it loses its resonance peak, rendering the structure ineffective for sensor applications.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and optical characterization of porous silicon heterostructure as matrix for sensing organic solvent via resonance peak and Q factor shift\",\"authors\":\"\",\"doi\":\"10.1016/j.sna.2024.115962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Porous silicon heterostructures with an extensive photonic band gap, featuring a microcavity defect layer, have been successfully fabricated and applied as sensor devices for detecting organic solvent species. These sensors utilize both the resonance peak shift and the inverse Q-factor as sensing parameters. Similar to conventional porous silicon microcavities immersed in various organic solvents, the resonance peak exhibits a linear dependence on the solvent refractive index. However, in the proposed structure, the inverse Q-factor also displays a comparable linear trend with the refractive index, but with greater sensitivity to solvent mixtures. This increased sensitivity arises because the inverse Q-factor deviates from linearity when the prior solvent is not adequately removed from the porous structure before reflectance measurements — a condition not commonly detected by the resonance peak shift. To improve the performance of these sensors, the porous structures were passivated by thermal oxidation. For sensor applications, it is crucial that the contrast in the effective refractive index between the high and low porosity layers of the passivated structures be sufficiently large. Otherwise, when the porous matrix is immersed in solvents, it loses its resonance peak, rendering the structure ineffective for sensor applications.</div></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924424724009567\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724009567","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Fabrication and optical characterization of porous silicon heterostructure as matrix for sensing organic solvent via resonance peak and Q factor shift
Porous silicon heterostructures with an extensive photonic band gap, featuring a microcavity defect layer, have been successfully fabricated and applied as sensor devices for detecting organic solvent species. These sensors utilize both the resonance peak shift and the inverse Q-factor as sensing parameters. Similar to conventional porous silicon microcavities immersed in various organic solvents, the resonance peak exhibits a linear dependence on the solvent refractive index. However, in the proposed structure, the inverse Q-factor also displays a comparable linear trend with the refractive index, but with greater sensitivity to solvent mixtures. This increased sensitivity arises because the inverse Q-factor deviates from linearity when the prior solvent is not adequately removed from the porous structure before reflectance measurements — a condition not commonly detected by the resonance peak shift. To improve the performance of these sensors, the porous structures were passivated by thermal oxidation. For sensor applications, it is crucial that the contrast in the effective refractive index between the high and low porosity layers of the passivated structures be sufficiently large. Otherwise, when the porous matrix is immersed in solvents, it loses its resonance peak, rendering the structure ineffective for sensor applications.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...