{"title":"通过量子计算深入了解用于基础和技术应用的 LnOIs 的电子和光学特性","authors":"Azmat Iqbal Bashir , Syed Maher Gillani , Sikander Azam , M.H. Sahafi , Amin Ur Rahman","doi":"10.1016/j.optlastec.2024.111940","DOIUrl":null,"url":null,"abstract":"<div><div>Besides their fundamental significance as f-electron materilas, lanthanide compounds have remarkable interest as potential candidates for catalytic, luminescent, optical communication, spintronics, energy, and biomedical applications. This study reports on the systematic quantum computational analysis on the geometrical structure properties, phonon vibrational, electronic, and light-assisted optical properties of two compounds of the lanthanide oxyhalides family, LnOI (Ln = La, Sm). The reported vibrational properties are phonon energy spectra and phonon density of states, the optical properties include complex dielectric parameter, reflectivity, index of refraction, absorption coefficient, loss function, extinction coefficient, and optical conductivity. For the required results on the targeted properties, the first-principles procedure based on Kohn-Sham density functional theory is employed. To account for the electronic exchange correlations, general gradient approximation within Hubbard model is used. The computed results predict the wide bandgap semiconducting nature of LnOIs with bandgaps of 3.44 eV for LaOI and 3.5 eV for SmOI. The optoelectronic properties reveal prominent feature in the visible and high energy regions, thus leading to potential implications to high-speed, high-power optoelectronics, and lighting devices.</div></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":"181 ","pages":"Article 111940"},"PeriodicalIF":4.6000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum computational insights into electronic and optical properties of LnOIs for fundamental and technological applications\",\"authors\":\"Azmat Iqbal Bashir , Syed Maher Gillani , Sikander Azam , M.H. Sahafi , Amin Ur Rahman\",\"doi\":\"10.1016/j.optlastec.2024.111940\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Besides their fundamental significance as f-electron materilas, lanthanide compounds have remarkable interest as potential candidates for catalytic, luminescent, optical communication, spintronics, energy, and biomedical applications. This study reports on the systematic quantum computational analysis on the geometrical structure properties, phonon vibrational, electronic, and light-assisted optical properties of two compounds of the lanthanide oxyhalides family, LnOI (Ln = La, Sm). The reported vibrational properties are phonon energy spectra and phonon density of states, the optical properties include complex dielectric parameter, reflectivity, index of refraction, absorption coefficient, loss function, extinction coefficient, and optical conductivity. For the required results on the targeted properties, the first-principles procedure based on Kohn-Sham density functional theory is employed. To account for the electronic exchange correlations, general gradient approximation within Hubbard model is used. The computed results predict the wide bandgap semiconducting nature of LnOIs with bandgaps of 3.44 eV for LaOI and 3.5 eV for SmOI. The optoelectronic properties reveal prominent feature in the visible and high energy regions, thus leading to potential implications to high-speed, high-power optoelectronics, and lighting devices.</div></div>\",\"PeriodicalId\":19511,\"journal\":{\"name\":\"Optics and Laser Technology\",\"volume\":\"181 \",\"pages\":\"Article 111940\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics and Laser Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0030399224013987\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030399224013987","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
摘要
镧系元素化合物除了作为 f 电子材料具有重要的基础意义外,作为催化、发光、光通信、自旋电子学、能源和生物医学应用的潜在候选物质,也引起了人们的极大兴趣。本研究报告对镧系元素氧卤化物家族的两种化合物 LnOI(Ln = La、Sm)的几何结构特性、声子振动特性、电子特性和光助光学特性进行了系统的量子计算分析。报告的振动特性包括声子能谱和声子态密度,光学特性包括复介电参数、反射率、折射率、吸收系数、损耗函数、消光系数和光导率。为了获得所需的目标特性结果,我们采用了基于 Kohn-Sham 密度泛函理论的第一原理程序。为了考虑电子交换相关性,采用了哈伯德模型中的一般梯度近似。计算结果预测了 LnOIs 的宽带隙半导体性质,LaOI 和 SmOI 的带隙分别为 3.44 eV 和 3.5 eV。光电特性显示了其在可见光和高能量区域的突出特点,从而对高速、大功率光电和照明设备产生了潜在影响。
Quantum computational insights into electronic and optical properties of LnOIs for fundamental and technological applications
Besides their fundamental significance as f-electron materilas, lanthanide compounds have remarkable interest as potential candidates for catalytic, luminescent, optical communication, spintronics, energy, and biomedical applications. This study reports on the systematic quantum computational analysis on the geometrical structure properties, phonon vibrational, electronic, and light-assisted optical properties of two compounds of the lanthanide oxyhalides family, LnOI (Ln = La, Sm). The reported vibrational properties are phonon energy spectra and phonon density of states, the optical properties include complex dielectric parameter, reflectivity, index of refraction, absorption coefficient, loss function, extinction coefficient, and optical conductivity. For the required results on the targeted properties, the first-principles procedure based on Kohn-Sham density functional theory is employed. To account for the electronic exchange correlations, general gradient approximation within Hubbard model is used. The computed results predict the wide bandgap semiconducting nature of LnOIs with bandgaps of 3.44 eV for LaOI and 3.5 eV for SmOI. The optoelectronic properties reveal prominent feature in the visible and high energy regions, thus leading to potential implications to high-speed, high-power optoelectronics, and lighting devices.
期刊介绍:
Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication.
The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas:
•development in all types of lasers
•developments in optoelectronic devices and photonics
•developments in new photonics and optical concepts
•developments in conventional optics, optical instruments and components
•techniques of optical metrology, including interferometry and optical fibre sensors
•LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow
•applications of lasers to materials processing, optical NDT display (including holography) and optical communication
•research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume)
•developments in optical computing and optical information processing
•developments in new optical materials
•developments in new optical characterization methods and techniques
•developments in quantum optics
•developments in light assisted micro and nanofabrication methods and techniques
•developments in nanophotonics and biophotonics
•developments in imaging processing and systems