{"title":"InGaAs/GaAs 双量子阱中电子量子寿命的温度依赖性：福山-亚伯拉罕机制","authors":"S.V. Gudina, Yu.G. Arapov, V.N. Neverov, A.P. Savelyev, N.S. Sandakov, N.G. Shelushinina, M.V. Yakunin","doi":"10.1016/j.physe.2024.116113","DOIUrl":null,"url":null,"abstract":"<div><div>In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field <em>B</em> ≤ 9 T in the temperature range <em>T</em> = (1.8–70) K is studied. The electron quantum lifetime, <em>τ</em><sub><em>q</em></sub>, is determined and the contributions of various scattering mechanisms to <em>τ</em><sub><em>q</em></sub>(<em>T</em>) are separated. It is shown that the observed nonmonotonic temperature dependence of the electron quantum lifetime is due to a combination of the interference contribution from the exchange electron-electron interaction in the ballistic regime and the inelastic electron-electron scattering in the diffusion regime (Fukuyama-Abrahams mechanism).</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116113"},"PeriodicalIF":2.9000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism\",\"authors\":\"S.V. Gudina, Yu.G. Arapov, V.N. Neverov, A.P. Savelyev, N.S. Sandakov, N.G. Shelushinina, M.V. Yakunin\",\"doi\":\"10.1016/j.physe.2024.116113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field <em>B</em> ≤ 9 T in the temperature range <em>T</em> = (1.8–70) K is studied. The electron quantum lifetime, <em>τ</em><sub><em>q</em></sub>, is determined and the contributions of various scattering mechanisms to <em>τ</em><sub><em>q</em></sub>(<em>T</em>) are separated. It is shown that the observed nonmonotonic temperature dependence of the electron quantum lifetime is due to a combination of the interference contribution from the exchange electron-electron interaction in the ballistic regime and the inelastic electron-electron scattering in the diffusion regime (Fukuyama-Abrahams mechanism).</div></div>\",\"PeriodicalId\":20181,\"journal\":{\"name\":\"Physica E-low-dimensional Systems & Nanostructures\",\"volume\":\"165 \",\"pages\":\"Article 116113\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica E-low-dimensional Systems & Nanostructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1386947724002170\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947724002170","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0
摘要
在 n-InGaAs/GaAs 双量子阱中，研究了在温度范围 T = (1.8-70) K 内平面磁场 B ≤ 9 T 对谐振电阻的抑制作用。确定了电子量子寿命τq，并分离了各种散射机制对τq(T)的贡献。研究表明，所观察到的电子量子寿命的非单调温度依赖性是由弹道机制中电子-电子交换相互作用的干涉贡献和扩散机制中的非弹性电子-电子散射（福山-亚伯拉罕机制）共同造成的。
Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism
In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B ≤ 9 T in the temperature range T = (1.8–70) K is studied. The electron quantum lifetime, τq, is determined and the contributions of various scattering mechanisms to τq(T) are separated. It is shown that the observed nonmonotonic temperature dependence of the electron quantum lifetime is due to a combination of the interference contribution from the exchange electron-electron interaction in the ballistic regime and the inelastic electron-electron scattering in the diffusion regime (Fukuyama-Abrahams mechanism).
期刊介绍：
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures
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