Peiyu Chen;Meng Wu;Wentao Zhao;Yufei Ma;Tianyu Jia;Le Ye
{"title":"具有近 CIM 模拟存储器的 44.3 TOPS/W SRAM 存贮器计算功能,可激活无 DAC/ADC 操作","authors":"Peiyu Chen;Meng Wu;Wentao Zhao;Yufei Ma;Tianyu Jia;Le Ye","doi":"10.1109/LSSC.2024.3418099","DOIUrl":null,"url":null,"abstract":"In this letter, we present an analog compute-in-memory (CIM) macro design which incorporates near-CIM analog memory and nonlinearity activation unit (NAU) to alleviate the DAC/ADC power bottleneck. Fully differential analog memory is designed with switched capacitor storage circuits. Activation function, e.g., rectified linear unit, is also performed in analog domain in NAU. The CIM macro is fabricated using TSMC 55-nm technology, with a peak macro-level efficiency of 44.3 TOPS/W and a system energy efficiency of 27.7 TOPS/W for analog input and output with 4-bit weight. The near-CIM analog memory and NAU solution brings 76.0% energy reduction compared with DAC/ADC solution, which contributes \n<inline-formula> <tex-math>$1.34\\times $ </tex-math></inline-formula>\n to \n<inline-formula> <tex-math>$2.37\\times $ </tex-math></inline-formula>\n energy efficiency improvement.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"299-302"},"PeriodicalIF":2.2000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 44.3 TOPS/W SRAM Compute-in-Memory With Near-CIM Analog Memory and Activation for DAC/ADC-Less Operations\",\"authors\":\"Peiyu Chen;Meng Wu;Wentao Zhao;Yufei Ma;Tianyu Jia;Le Ye\",\"doi\":\"10.1109/LSSC.2024.3418099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we present an analog compute-in-memory (CIM) macro design which incorporates near-CIM analog memory and nonlinearity activation unit (NAU) to alleviate the DAC/ADC power bottleneck. Fully differential analog memory is designed with switched capacitor storage circuits. Activation function, e.g., rectified linear unit, is also performed in analog domain in NAU. The CIM macro is fabricated using TSMC 55-nm technology, with a peak macro-level efficiency of 44.3 TOPS/W and a system energy efficiency of 27.7 TOPS/W for analog input and output with 4-bit weight. The near-CIM analog memory and NAU solution brings 76.0% energy reduction compared with DAC/ADC solution, which contributes \\n<inline-formula> <tex-math>$1.34\\\\times $ </tex-math></inline-formula>\\n to \\n<inline-formula> <tex-math>$2.37\\\\times $ </tex-math></inline-formula>\\n energy efficiency improvement.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"7 \",\"pages\":\"299-302\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10569024/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10569024/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A 44.3 TOPS/W SRAM Compute-in-Memory With Near-CIM Analog Memory and Activation for DAC/ADC-Less Operations
In this letter, we present an analog compute-in-memory (CIM) macro design which incorporates near-CIM analog memory and nonlinearity activation unit (NAU) to alleviate the DAC/ADC power bottleneck. Fully differential analog memory is designed with switched capacitor storage circuits. Activation function, e.g., rectified linear unit, is also performed in analog domain in NAU. The CIM macro is fabricated using TSMC 55-nm technology, with a peak macro-level efficiency of 44.3 TOPS/W and a system energy efficiency of 27.7 TOPS/W for analog input and output with 4-bit weight. The near-CIM analog memory and NAU solution brings 76.0% energy reduction compared with DAC/ADC solution, which contributes
$1.34\times $
to
$2.37\times $
energy efficiency improvement.