Yicheng Wang;Zhaowu Wang;Zhenyu Wang;Xiaochen Tang;Yong Wang
{"title":"0.10µm GaAs 工艺中用于交换式波束成形网络的 X 波段可扩展可重构 1:2 功率分配器开关","authors":"Yicheng Wang;Zhaowu Wang;Zhenyu Wang;Xiaochen Tang;Yong Wang","doi":"10.1109/LSSC.2024.3458453","DOIUrl":null,"url":null,"abstract":"In this letter, an X-band expandable reconfigurable 1:2 power divider switch (PDSW) is proposed for switched beam-forming networks. A switched inductor-artificial transmission line (SI-ATL) is proposed. With proper switch logic, the SI-ATL features two types of transmission line (TL): 1) a \n<inline-formula> <tex-math>$\\lambda $ </tex-math></inline-formula>\n/4 TL of \n<inline-formula> <tex-math>$50\\sqrt {2} \\; \\Omega $ </tex-math></inline-formula>\n and 2) a TL of \n<inline-formula> <tex-math>$50 \\; \\Omega $ </tex-math></inline-formula>\n. This enables the PDSW to realize three port states of two corresponding modes, including single-pole–double-throw (SPDT) mode and power divider (PD) mode. The PDSW has the ability to be expanded to an N-stage 1:\n<inline-formula> <tex-math>$2^{N}$ </tex-math></inline-formula>\n matrix with \n<inline-formula> <tex-math>$2^{2^{N}} - 1$ </tex-math></inline-formula>\n states. The proposed design is fabricated with a 0.10-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm GaAs pHEMT process. The measurement results show a \n<inline-formula> <tex-math>$\\leq 1$ </tex-math></inline-formula>\n.2-dB insertion loss (IL), a \n<inline-formula> <tex-math>$\\geq $ </tex-math></inline-formula>\n 10-dB return loss (RL), and a \n<inline-formula> <tex-math>$\\geq 40$ </tex-math></inline-formula>\n-dBm input 3rd-order intercept points (IIP3), in both modes. The isolation is 27–32 dB for SPDT mode and 14–31 dB for PD mode.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"303-306"},"PeriodicalIF":2.2000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An X-Band Expandable Reconfigurable 1:2 Power Divider Switch for Switched Beam-Forming Networks in 0.10-µm GaAs Process\",\"authors\":\"Yicheng Wang;Zhaowu Wang;Zhenyu Wang;Xiaochen Tang;Yong Wang\",\"doi\":\"10.1109/LSSC.2024.3458453\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, an X-band expandable reconfigurable 1:2 power divider switch (PDSW) is proposed for switched beam-forming networks. A switched inductor-artificial transmission line (SI-ATL) is proposed. With proper switch logic, the SI-ATL features two types of transmission line (TL): 1) a \\n<inline-formula> <tex-math>$\\\\lambda $ </tex-math></inline-formula>\\n/4 TL of \\n<inline-formula> <tex-math>$50\\\\sqrt {2} \\\\; \\\\Omega $ </tex-math></inline-formula>\\n and 2) a TL of \\n<inline-formula> <tex-math>$50 \\\\; \\\\Omega $ </tex-math></inline-formula>\\n. This enables the PDSW to realize three port states of two corresponding modes, including single-pole–double-throw (SPDT) mode and power divider (PD) mode. The PDSW has the ability to be expanded to an N-stage 1:\\n<inline-formula> <tex-math>$2^{N}$ </tex-math></inline-formula>\\n matrix with \\n<inline-formula> <tex-math>$2^{2^{N}} - 1$ </tex-math></inline-formula>\\n states. The proposed design is fabricated with a 0.10-\\n<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>\\nm GaAs pHEMT process. The measurement results show a \\n<inline-formula> <tex-math>$\\\\leq 1$ </tex-math></inline-formula>\\n.2-dB insertion loss (IL), a \\n<inline-formula> <tex-math>$\\\\geq $ </tex-math></inline-formula>\\n 10-dB return loss (RL), and a \\n<inline-formula> <tex-math>$\\\\geq 40$ </tex-math></inline-formula>\\n-dBm input 3rd-order intercept points (IIP3), in both modes. The isolation is 27–32 dB for SPDT mode and 14–31 dB for PD mode.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"7 \",\"pages\":\"303-306\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10677346/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10677346/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
An X-Band Expandable Reconfigurable 1:2 Power Divider Switch for Switched Beam-Forming Networks in 0.10-µm GaAs Process
In this letter, an X-band expandable reconfigurable 1:2 power divider switch (PDSW) is proposed for switched beam-forming networks. A switched inductor-artificial transmission line (SI-ATL) is proposed. With proper switch logic, the SI-ATL features two types of transmission line (TL): 1) a
$\lambda $
/4 TL of
$50\sqrt {2} \; \Omega $
and 2) a TL of
$50 \; \Omega $
. This enables the PDSW to realize three port states of two corresponding modes, including single-pole–double-throw (SPDT) mode and power divider (PD) mode. The PDSW has the ability to be expanded to an N-stage 1:
$2^{N}$
matrix with
$2^{2^{N}} - 1$
states. The proposed design is fabricated with a 0.10-
$\mu $
m GaAs pHEMT process. The measurement results show a
$\leq 1$
.2-dB insertion loss (IL), a
$\geq $
10-dB return loss (RL), and a
$\geq 40$
-dBm input 3rd-order intercept points (IIP3), in both modes. The isolation is 27–32 dB for SPDT mode and 14–31 dB for PD mode.