{"title":"用 MXenes 纳米片敷贴 AgNWs:透明印刷电极兼具高导电性和可调功函数,适用于高性能光电技术","authors":"Zhongshi Ju, Yusheng Chen, Peng Li, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì","doi":"10.1002/adma.202412512","DOIUrl":null,"url":null,"abstract":"High-work function transparent electrodes (HWFTEs) are key for establishing Schottky and Ohmic contacts with n-type and p-type semiconductors, respectively. However, the development of printable materials that combine high transmittance, low sheet resistance, and tunable work function remains an outstanding challenge. This work reports a high-performance HWFTE composed of Ag nanowires enveloped conformally by Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> nanosheets (TA), forming a shell-core network structure. The printed TA HWFTEs display an ultrahigh transmittance (>94%) from the deep-ultraviolet (DUV) to the entire visible spectral region, a low sheet resistance (<15 Ω sq<sup>−1</sup>), and a tunable work function ranging from 4.7 to 6.0 eV. The introduction of additional oxygen terminations on the Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> surface generates positive dipoles, which not only increases the work function of the TA HWFTEs but also elevates the TA/Ga<sub>2</sub>O<sub>3</sub> Schottky barrier, resulting in a high self-powered responsivity of 18 mA W<sup>−1</sup> in Ga<sub>2</sub>O<sub>3</sub> diode DUV photodetectors, as demonstrated via experimental characterizations and theoretical calculations. Furthermore, the TA HWFTEs-based organic light-emitting transistors exhibit exceptional emission brightness of 5020 cd m<sup>−2</sup>, being four-fold greater than that in Au electrodes-based devices. The innovative nano-structure design, work function tuning, and the revealed mechanisms of electrode-semiconductor contact physics constitute a substantial advancement in high-performance optoelectronic technology.","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":null,"pages":null},"PeriodicalIF":27.4000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dressing AgNWs with MXenes Nanosheets: Transparent Printed Electrodes Combining High-Conductivity and Tunable Work Function for High-Performance Opto-Electronics\",\"authors\":\"Zhongshi Ju, Yusheng Chen, Peng Li, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì\",\"doi\":\"10.1002/adma.202412512\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-work function transparent electrodes (HWFTEs) are key for establishing Schottky and Ohmic contacts with n-type and p-type semiconductors, respectively. However, the development of printable materials that combine high transmittance, low sheet resistance, and tunable work function remains an outstanding challenge. This work reports a high-performance HWFTE composed of Ag nanowires enveloped conformally by Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> nanosheets (TA), forming a shell-core network structure. The printed TA HWFTEs display an ultrahigh transmittance (>94%) from the deep-ultraviolet (DUV) to the entire visible spectral region, a low sheet resistance (<15 Ω sq<sup>−1</sup>), and a tunable work function ranging from 4.7 to 6.0 eV. The introduction of additional oxygen terminations on the Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> surface generates positive dipoles, which not only increases the work function of the TA HWFTEs but also elevates the TA/Ga<sub>2</sub>O<sub>3</sub> Schottky barrier, resulting in a high self-powered responsivity of 18 mA W<sup>−1</sup> in Ga<sub>2</sub>O<sub>3</sub> diode DUV photodetectors, as demonstrated via experimental characterizations and theoretical calculations. Furthermore, the TA HWFTEs-based organic light-emitting transistors exhibit exceptional emission brightness of 5020 cd m<sup>−2</sup>, being four-fold greater than that in Au electrodes-based devices. The innovative nano-structure design, work function tuning, and the revealed mechanisms of electrode-semiconductor contact physics constitute a substantial advancement in high-performance optoelectronic technology.\",\"PeriodicalId\":114,\"journal\":{\"name\":\"Advanced Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":27.4000,\"publicationDate\":\"2024-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/adma.202412512\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adma.202412512","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
高功函数透明电极(HWFTE)是分别与 n 型和 p 型半导体建立肖特基和欧姆接触的关键。然而,开发兼具高透光率、低薄片电阻和可调功函数的可印刷材料仍是一项艰巨的挑战。这项工作报告了一种高性能 HWFTE,它由银纳米线与 Ti3C2Tx 纳米片(TA)保形包覆,形成壳核网络结构。印刷的 TA HWFTE 具有从深紫外(DUV)到整个可见光谱区的超高透过率(94%)、低薄片电阻(15 Ω sq-1)和 4.7 至 6.0 eV 的可调功函数。在 Ti3C2Tx 表面引入额外的氧端接会产生正偶极子,这不仅增加了 TA HWFTE 的功函数,还提高了 TA/Ga2O3 肖特基势垒,从而在 Ga2O3 二极管 DUV 光电探测器中实现了 18 mA W-1 的高自供电响应率,实验表征和理论计算均证明了这一点。此外,基于 TA HWFTEs 的有机发光晶体管的发射亮度高达 5020 cd m-2,是基于金电极器件的四倍。创新的纳米结构设计、功函数调谐以及所揭示的电极-半导体接触物理机制是高性能光电技术的一大进步。
Dressing AgNWs with MXenes Nanosheets: Transparent Printed Electrodes Combining High-Conductivity and Tunable Work Function for High-Performance Opto-Electronics
High-work function transparent electrodes (HWFTEs) are key for establishing Schottky and Ohmic contacts with n-type and p-type semiconductors, respectively. However, the development of printable materials that combine high transmittance, low sheet resistance, and tunable work function remains an outstanding challenge. This work reports a high-performance HWFTE composed of Ag nanowires enveloped conformally by Ti3C2Tx nanosheets (TA), forming a shell-core network structure. The printed TA HWFTEs display an ultrahigh transmittance (>94%) from the deep-ultraviolet (DUV) to the entire visible spectral region, a low sheet resistance (<15 Ω sq−1), and a tunable work function ranging from 4.7 to 6.0 eV. The introduction of additional oxygen terminations on the Ti3C2Tx surface generates positive dipoles, which not only increases the work function of the TA HWFTEs but also elevates the TA/Ga2O3 Schottky barrier, resulting in a high self-powered responsivity of 18 mA W−1 in Ga2O3 diode DUV photodetectors, as demonstrated via experimental characterizations and theoretical calculations. Furthermore, the TA HWFTEs-based organic light-emitting transistors exhibit exceptional emission brightness of 5020 cd m−2, being four-fold greater than that in Au electrodes-based devices. The innovative nano-structure design, work function tuning, and the revealed mechanisms of electrode-semiconductor contact physics constitute a substantial advancement in high-performance optoelectronic technology.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.