基于 YAG:Ce 和 TbAG:Ce 单晶薄膜以及 GAGG:Ce 晶体基底的多层复合闪烁体的闪烁特性

Q2 Engineering Optical Materials: X Pub Date : 2024-10-09 DOI:10.1016/j.omx.2024.100372
Y. Syrotych , V. Gorbenko , S. Witkiewicz-Łukaszek , T. Zorenko , M. Kaczmarek , J. Pejchal , J.A. Mares , R. Kucerkova , M. Nikl , K. Kamada , A. Yoshikawa , Yu Zorenko
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引用次数: 0

摘要

这项工作展示了我们研究小组目前在利用液相外延生长技术,基于掺杂 Ce3+ 的石榴石化合物的外延结构,开发用于辐射监测混合电离辐射通量各种成分的两层和三层复合材料方面取得的进展。这些闪烁体包含一个或两个单晶薄膜,专门用于登记低穿透性粒子,以及用于检测高穿透性γ射线的块状单晶基底。为了创建两层和三层外延结构,使用了掺杂 Ce3+ 的 Y3Al5O12、Tb3Al5O12 和 Tb2GdAl5O12 石榴石单晶薄膜。基底则使用了固定镓浓度为 x = 2.3 和 3.0 的混合 Gd3GaxAl5-xO12:Ce 石榴石单晶。为了评估这些外延结构的闪烁特性,测量了在α粒子(239Pu)、β粒子(90Sr + 90Y)和γ射线(137Cs)激发下的脉冲高度谱、光产率和闪烁衰减动力学。最后,计算了所研究的复合闪烁体的优越性,以选择最佳外延结构,用于同时登记 α 和 β 粒子以及 γ 射线。
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Scintillation properties of multilayered composite scintillators based on the YAG:Ce and TbAG:Ce single crystalline films and GAGG:Ce crystal substrates
This work demonstrates current progress of our group in developing of two- and three-layered composite for radiation monitoring of various components of mixed ionization radiation fluxes based on the epitaxial structures of Ce3+ doped garnet compounds using the Liquid Phase Epitaxy growth technique. These scintillators contain one or two single crystalline films, dedicated for registration of low-penetrating particles, and bulk single crystal substrates used for detection of high-penetrating γ-rays. For creation of two- and three-layered epitaxial structures, the single crystalline films of Ce3+ doped Y3Al5O12, Tb3Al5O12 and Tb2GdAl5O12 garnets were used. The single crystal of mixed Gd3GaxAl5-xO12:Ce garnet with fixed Ga concentrations of x = 2.3 and 3.0 are utilized as substrates. To assess the scintillation properties of these epitaxial structures, the pulse height spectra, light yield and scintillation decay kinetics were measured under excitation by α–particles (239Pu), β-particles (90Sr + 90Y) and γ–rays (137Cs). Finally, the figure-of merit of composite scintillators under study were calculated for selection of the best epitaxial structures for simultaneous registration α– and β-particles and γ–rays.
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
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