电路寄生对高增益非隔离开关电感器拓扑性能影响的状态空间建模与验证

Maraka Israyelu;Sashidhar Sashidhar
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摘要

高增益直流-直流转换器在不间断电源、电网集成、电动汽车等各种应用中越来越受欢迎。与传统直流-直流转换器相比,分析高增益直流-直流转换器的电压增益、稳定性和灵敏度因素至关重要,这主要是由于无源元件数量的增加。为了分析这些因素,针对传统直流-直流转换器建立了不同的小信号模型。然而,这些模型并未考虑电路寄生的所有影响。本文介绍了高增益非隔离开关电感(NISI)和传统升压转换器拓扑结构的详细小信号模型,并考虑了电路寄生的所有影响。此外,文章还强调了电路寄生对高增益 NISI 拓扑的小信号控制到输出传递函数和电压增益的影响。随后,对高增益 NISI 和传统升压直流-直流转换器进行了仿真研究,并给出了结果。最后,制作了转换器原型,并进行了实验研究,以确定模拟结果。在额定功率为 600 W 时,高增益 NISI 转换器的实测最大效率为 95%。
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State-Space Modeling and Validation of Circuit Parasitics' Effect on the Performance of a High-Gain Nonisolated Switched Inductor Topology
High-gain dc-dc converters are becoming popular in various applications such as uninterruptible power supplies, grid integration, electric vehicles, etc. Analysis of the voltage gain, stability, and sensitivity factors of the high-gain dc-dc converters is essential in comparison with conventional dc-dc converters, primarily due to the increased number of passive components. In order to analyze these factors, different small-signal models are well-established for conventional dc-dc converters. However, these models do not consider all the effects of circuit parasitics. This article presents a detailed small-signal modeling of high-gain nonisolated switched inductor (NISI) and conventional boost converter topologies, taking into account all the effects of circuit parasitics. Further, the effect of circuit parasitics on the small-signal control-to-output transfer function and voltage gain of the high-gain NISI topology is highlighted. Later, simulation studies are carried-out on the high-gain NISI and conventional boost dc-dc converters, and the results are presented. Finally, the prototypes of the converters are fabricated, and experimental studies are carried-out to ascertain the results obtained from simulations. The measured maximum efficiency of the high-gain NISI converter is 95% at a power rating of 600 W.
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