C.B. Nettar , R.N. Bhowmik , K. Devarani Devi , R.C. Meena , K. Asokan
{"title":"改变 180 keV Co 和 Fe 植入 Al1.5Ga0.5O3 薄膜的微观结构、光学和电学特性","authors":"C.B. Nettar , R.N. Bhowmik , K. Devarani Devi , R.C. Meena , K. Asokan","doi":"10.1016/j.radphyschem.2024.112275","DOIUrl":null,"url":null,"abstract":"<div><div>We report the microstructure, optical and electrical properties of Al<sub>1.5</sub>Ga<sub>0.5</sub>O<sub>3</sub> thin films implanted by 180 keV Fe and Co ions. The X-ray diffraction pattern confirmed rhombohedral structure with R <span><math><mrow><mover><mn>3</mn><mo>‾</mo></mover></mrow></math></span> c space group for pristine and Fe-implanted films. The Co-implanted films showed amorphous structure. SRIM simulations suggested oxygen vacancy in the films. The atomic force microscopy confirmed the formation of spherical-shaped particles (17–20 nm) in Co-implanted GaAlO_Si_550 films. The RMS roughness of the GaAlO_Si_550 films increased from 19 nm to 25 nm at higher Co-ion implantation fluences. X-ray photoelectron spectroscopy supported the formation of oxygen vacancy and non-stoichiometry at surface of the films. Electrical conductivity of the films enhanced up to 10<sup>−2</sup>- 10<sup>−3</sup> S/m by metallic Fe- and Co ion implantation. Optical band gap was found at ∼3.85 eV for GaAlO_Al_550 and ∼4.04 eV for GaAlO_Si_550 pristine films. Optical band gap was stabilized in the range of 3.75–4.52 eV for Fe- and Co-implanted films, which can be useful for opto-electronic device applications in the UV and deep blue region.</div></div>","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"226 ","pages":"Article 112275"},"PeriodicalIF":2.8000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modification of microstructure, optical, and electrical properties in 180 keV Co and Fe implanted Al1.5Ga0.5O3 thin-films\",\"authors\":\"C.B. Nettar , R.N. Bhowmik , K. Devarani Devi , R.C. Meena , K. Asokan\",\"doi\":\"10.1016/j.radphyschem.2024.112275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We report the microstructure, optical and electrical properties of Al<sub>1.5</sub>Ga<sub>0.5</sub>O<sub>3</sub> thin films implanted by 180 keV Fe and Co ions. The X-ray diffraction pattern confirmed rhombohedral structure with R <span><math><mrow><mover><mn>3</mn><mo>‾</mo></mover></mrow></math></span> c space group for pristine and Fe-implanted films. The Co-implanted films showed amorphous structure. SRIM simulations suggested oxygen vacancy in the films. The atomic force microscopy confirmed the formation of spherical-shaped particles (17–20 nm) in Co-implanted GaAlO_Si_550 films. The RMS roughness of the GaAlO_Si_550 films increased from 19 nm to 25 nm at higher Co-ion implantation fluences. X-ray photoelectron spectroscopy supported the formation of oxygen vacancy and non-stoichiometry at surface of the films. Electrical conductivity of the films enhanced up to 10<sup>−2</sup>- 10<sup>−3</sup> S/m by metallic Fe- and Co ion implantation. Optical band gap was found at ∼3.85 eV for GaAlO_Al_550 and ∼4.04 eV for GaAlO_Si_550 pristine films. Optical band gap was stabilized in the range of 3.75–4.52 eV for Fe- and Co-implanted films, which can be useful for opto-electronic device applications in the UV and deep blue region.</div></div>\",\"PeriodicalId\":20861,\"journal\":{\"name\":\"Radiation Physics and Chemistry\",\"volume\":\"226 \",\"pages\":\"Article 112275\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radiation Physics and Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0969806X24007679\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0969806X24007679","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
摘要
我们报告了被 180 keV Fe 和 Co 离子植入的 Al1.5Ga0.5O3 薄膜的微观结构、光学和电学特性。X 射线衍射图样证实了原始薄膜和铁离子植入薄膜具有 R 3‾c 空间群的斜方体结构。而钴植入薄膜则呈现非晶态结构。SRIM 模拟表明薄膜中存在氧空位。原子力显微镜证实,在 Co-implanted GaAlO_Si_550 薄膜中形成了球形颗粒(17-20 nm)。在较高的 Co 离子注入通量下,GaAlO_Si_550 薄膜的均方根粗糙度从 19 nm 增加到 25 nm。X 射线光电子能谱证明了薄膜表面氧空位的形成和非均一性。通过金属 Fe 离子和 Co 离子植入,薄膜的电导率提高到 10-2- 10-3 S/m。GaAlO_Al_550 和 GaAlO_Si_550 原始薄膜的光带隙分别为 ∼3.85 eV 和 ∼4.04 eV。Fe-和 Co-植入薄膜的光带隙稳定在 3.75-4.52 eV 范围内,可用于紫外和深蓝区域的光电器件应用。
Modification of microstructure, optical, and electrical properties in 180 keV Co and Fe implanted Al1.5Ga0.5O3 thin-films
We report the microstructure, optical and electrical properties of Al1.5Ga0.5O3 thin films implanted by 180 keV Fe and Co ions. The X-ray diffraction pattern confirmed rhombohedral structure with R c space group for pristine and Fe-implanted films. The Co-implanted films showed amorphous structure. SRIM simulations suggested oxygen vacancy in the films. The atomic force microscopy confirmed the formation of spherical-shaped particles (17–20 nm) in Co-implanted GaAlO_Si_550 films. The RMS roughness of the GaAlO_Si_550 films increased from 19 nm to 25 nm at higher Co-ion implantation fluences. X-ray photoelectron spectroscopy supported the formation of oxygen vacancy and non-stoichiometry at surface of the films. Electrical conductivity of the films enhanced up to 10−2- 10−3 S/m by metallic Fe- and Co ion implantation. Optical band gap was found at ∼3.85 eV for GaAlO_Al_550 and ∼4.04 eV for GaAlO_Si_550 pristine films. Optical band gap was stabilized in the range of 3.75–4.52 eV for Fe- and Co-implanted films, which can be useful for opto-electronic device applications in the UV and deep blue region.
期刊介绍:
Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing.
The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.