用于人工耳蜗的全集成动态电压缩放刺激器集成电路

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-09-17 DOI:10.1109/LSSC.2024.3462559

Kim-Hoang Nguyen;Quyet Nguyen;Quynh-Trang Nguyen;Thanh-Tung Vu;Woojin Ahn;Loan Pham-Nguyen;Hanh-Phuc Le;Minkyu Je

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引用次数: 0

摘要

本文介绍了一种全集成动态电压缩放刺激器集成电路，包括一个新颖的可重新配置电源调制器（RSM）和 12 个高耐压通道驱动器，用于人工耳蜗植入，采用 180 纳米标准 CMOS 工艺。RSM 设计用于自适应生成 2.6 至 11.3 V 四种电源电压电平中的一种，从而有效地以不同的电极-组织-界面阻抗和刺激电流刺激耳蜗，同时提高电源效率。通道驱动器设计实现了小型化，可在单个集成电路内支持高通道数应用。此外，还采用了额外的过流保护功能，以确保双相刺激脉冲之间的电荷平衡，从而对电极短路技术起到补充作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Fully Integrated Dynamic-Voltage-Scaling Stimulator IC for Cochlear Implants

A fully integrated dynamic-voltage-scaling stimulator IC, consisting of a novel reconfigurable supply modulator (RSM) and 12 high-voltage-tolerant channel drivers, for cochlear implants, is presented, utilizing a 180-nm standard CMOS process. The RSM is designed to adaptively generate one of four supply voltage levels ranging from 2.6 to 11.3 V, effectively stimulating the cochlea with varying electrode-tissue-interface impedance and stimulus currents while offering improved power efficiency. The channel driver design is miniaturized to support high-channel-count applications within a single IC. Additional excessive current protection is implemented to ensure charge balancing between biphasic stimulating pulses, complementing the electrode-shorting technique.

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量