Dongha Lee;Seki Kim;Takahiro Nomiyama;Dong-Hoon Jung;Dongsu Kim;Jongwoo Lee
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引用次数: 0
摘要
这封信介绍了一种适用于移动 SoC 应用的 10 A 计算数字 LDO(CDLDO),专门针对大型 CPU 内核。所提出的 CDLDO 通过重复使用分布在整个 CPU 中的功率门控开关 (PGS),消除了功率场效应晶体管的面积开销。CDLDO 采用带有斜率检测器的时基指数控制 (TEC),以实现快速瞬态响应并提高稳定性。此外,还引入了退步和负步控制,以减轻控制器和 PGS 之间传播延迟的影响。此外,预计算方案大大减少了计算时间,并放宽了合成过程中的时序限制。所提出的 CDLDO 采用 3 nm GAAFET CMOS 工艺实现。由八个分布式 CDLDO 单元组成的集成电路可提供 10 A 的最大负载电流,电流密度为 263 A/mm2。CDLDO 在 6.5 A/1 ns 负载转换下显示出 94 mV 下降。
A Computational Digital LDO With Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for Mobile SoC Application
This letter introduces a 10 A computational digital LDO (CDLDO) for mobile SoC application specifically targeting a big CPU core. The proposed CDLDO eliminates the power-FET area overhead by reusing power gating switches (PGSs) already distributed throughout the entire CPU. The CDLDO employs a time-based exponential control (TEC) with a slope detector to achieve fast-transient response and improve stability. Furthermore, a step-back and a negative-step control are introduced to mitigate the effect of the propagation delay between the controller and the PGSs. Additionally, a pre-computational scheme significantly reduces calculation time and relaxes timing constraints during synthesis. The proposed CDLDO is implemented in 3 nm GAAFET CMOS process. An implemented IC of eight distributed CDLDO units provides a maximum load current of 10 A with a current density of 263 A/mm2. The CDLDO shows 94 mV droop under 6.5 A/1 ns load transition.