Alphan Sennaroglu, Mevlana Yunus Uludag, Mustafa Uzun
{"title":"2 μm 和 2.3 μm 掺铥离子激光器共激光的分析条件","authors":"Alphan Sennaroglu, Mevlana Yunus Uludag, Mustafa Uzun","doi":"10.1007/s11082-024-07629-4","DOIUrl":null,"url":null,"abstract":"<div><p>By assuming low doping concentration with negligible concentration-dependent energy transfer mechanisms, we employ rate-equation formalism to derive the coupled power-gain equations in steady state and investigate the requirements of co-lasing at 2 μm and 2.3 μm in continuous-wave thulium ion (Tm<sup>3+</sup>)-doped lasers. We obtain an analytical condition which provides a criterion about which optical transition lases first. Analytical expressions are further derived for single-lasing and co-lasing threshold powers. By using the spectroscopic parameters for Tm<sup>3+</sup>:YLiF<sub>4</sub>, our model predicts that 2.3 μm lasing can start first in gain media with low Tm<sup>3+</sup> ion doping if the length of the gain medium is sufficiently long. We then discuss how the results of the low-concentration model developed in this study can be extended to the case of high doping concentration in an approximate way and obtain good agreement between model predictions and experimental co-lasing data previously obtained with Tm<sup>3+</sup>:YLiF<sub>4</sub> lasers.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytical conditions for co-lasing in thulium ion-doped lasers at 2 μm and 2.3 μm\",\"authors\":\"Alphan Sennaroglu, Mevlana Yunus Uludag, Mustafa Uzun\",\"doi\":\"10.1007/s11082-024-07629-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>By assuming low doping concentration with negligible concentration-dependent energy transfer mechanisms, we employ rate-equation formalism to derive the coupled power-gain equations in steady state and investigate the requirements of co-lasing at 2 μm and 2.3 μm in continuous-wave thulium ion (Tm<sup>3+</sup>)-doped lasers. We obtain an analytical condition which provides a criterion about which optical transition lases first. Analytical expressions are further derived for single-lasing and co-lasing threshold powers. By using the spectroscopic parameters for Tm<sup>3+</sup>:YLiF<sub>4</sub>, our model predicts that 2.3 μm lasing can start first in gain media with low Tm<sup>3+</sup> ion doping if the length of the gain medium is sufficiently long. We then discuss how the results of the low-concentration model developed in this study can be extended to the case of high doping concentration in an approximate way and obtain good agreement between model predictions and experimental co-lasing data previously obtained with Tm<sup>3+</sup>:YLiF<sub>4</sub> lasers.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07629-4\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07629-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Analytical conditions for co-lasing in thulium ion-doped lasers at 2 μm and 2.3 μm
By assuming low doping concentration with negligible concentration-dependent energy transfer mechanisms, we employ rate-equation formalism to derive the coupled power-gain equations in steady state and investigate the requirements of co-lasing at 2 μm and 2.3 μm in continuous-wave thulium ion (Tm3+)-doped lasers. We obtain an analytical condition which provides a criterion about which optical transition lases first. Analytical expressions are further derived for single-lasing and co-lasing threshold powers. By using the spectroscopic parameters for Tm3+:YLiF4, our model predicts that 2.3 μm lasing can start first in gain media with low Tm3+ ion doping if the length of the gain medium is sufficiently long. We then discuss how the results of the low-concentration model developed in this study can be extended to the case of high doping concentration in an approximate way and obtain good agreement between model predictions and experimental co-lasing data previously obtained with Tm3+:YLiF4 lasers.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.