{"title":"利用自由电荷载流子在各向异性多孔硅纳米结构中定制双折射和二色性,以实现红外光子应用","authors":"Yingying Deng, Anton Ikonnikov, Victor Timoshenko","doi":"10.1007/s00339-024-07981-y","DOIUrl":null,"url":null,"abstract":"<div><p>A contribution of free charge carriers in an ensemble of anisotropic silicon nanocrystals to the optical properties in the infrared region has been numerically analyzed. Utilizing a generalized effective medium model that accounts for the shape anisotropy of silicon nanocrystals and mobile charge carriers the reflectance, absorption, and transmittance were found to be strongly dependent on the concentration of free charge carriers. For charge carrier (hole) concentrations ranging from <span>\\(10^{16}\\)</span> to <span>\\(10^{20}\\)</span> <span>\\(cm^{-3}\\)</span>, significant birefringence and linear dichroism (absorption anisotropy) are observed, along with a non-monotonic dependence of the refractive index and transmittance coefficients for perpendicular polarization directions. The simulation results align well with experimentally measured transmittance spectra of in-plain anisotropic porous silicon films prepared electrochemically from heavily boron-doped (110)-oriented crystalline silicon wafers. Furthermore, the obtained results are discussed in view potential applications in all-silicon based optical switches and modulators and other active elements of the silicon photonics.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tailoring of birefringence and dichroism in anisotropic porous silicon nanostructures with free charge carriers for infrared photonic applications\",\"authors\":\"Yingying Deng, Anton Ikonnikov, Victor Timoshenko\",\"doi\":\"10.1007/s00339-024-07981-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A contribution of free charge carriers in an ensemble of anisotropic silicon nanocrystals to the optical properties in the infrared region has been numerically analyzed. Utilizing a generalized effective medium model that accounts for the shape anisotropy of silicon nanocrystals and mobile charge carriers the reflectance, absorption, and transmittance were found to be strongly dependent on the concentration of free charge carriers. For charge carrier (hole) concentrations ranging from <span>\\\\(10^{16}\\\\)</span> to <span>\\\\(10^{20}\\\\)</span> <span>\\\\(cm^{-3}\\\\)</span>, significant birefringence and linear dichroism (absorption anisotropy) are observed, along with a non-monotonic dependence of the refractive index and transmittance coefficients for perpendicular polarization directions. The simulation results align well with experimentally measured transmittance spectra of in-plain anisotropic porous silicon films prepared electrochemically from heavily boron-doped (110)-oriented crystalline silicon wafers. Furthermore, the obtained results are discussed in view potential applications in all-silicon based optical switches and modulators and other active elements of the silicon photonics.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-024-07981-y\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-024-07981-y","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Tailoring of birefringence and dichroism in anisotropic porous silicon nanostructures with free charge carriers for infrared photonic applications
A contribution of free charge carriers in an ensemble of anisotropic silicon nanocrystals to the optical properties in the infrared region has been numerically analyzed. Utilizing a generalized effective medium model that accounts for the shape anisotropy of silicon nanocrystals and mobile charge carriers the reflectance, absorption, and transmittance were found to be strongly dependent on the concentration of free charge carriers. For charge carrier (hole) concentrations ranging from \(10^{16}\) to \(10^{20}\)\(cm^{-3}\), significant birefringence and linear dichroism (absorption anisotropy) are observed, along with a non-monotonic dependence of the refractive index and transmittance coefficients for perpendicular polarization directions. The simulation results align well with experimentally measured transmittance spectra of in-plain anisotropic porous silicon films prepared electrochemically from heavily boron-doped (110)-oriented crystalline silicon wafers. Furthermore, the obtained results are discussed in view potential applications in all-silicon based optical switches and modulators and other active elements of the silicon photonics.
期刊介绍:
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.