Zhiguo Yu;Donghe Tu;Wei Yan;Huan Guan;Lei Jiang;Xuejiao Sun;Zhiyong Li
{"title":"使用厚电容加载慢波电极的硅基底 120 GHz 2 V 以下铌酸锂薄膜调制器","authors":"Zhiguo Yu;Donghe Tu;Wei Yan;Huan Guan;Lei Jiang;Xuejiao Sun;Zhiyong Li","doi":"10.1109/JPHOT.2024.3477311","DOIUrl":null,"url":null,"abstract":"Electro-optic modulators with large bandwidth and low voltage are crucial for the high-baud-rate digital communication and high-carrier-frequency analog links. Recently, thin-film lithium niobate (TFLN) modulators with sub-1 V voltage and 140 GHz bandwidth have been emerged on the low permittivity substrates, such as quartz. However, on the high permittivity environment, such as silicon substrates, the bandwidth dramatically reduced to below 100 GHz even if the voltage was raised to around 3 V. We break the voltage–bandwidth trade-off limit in TFLN modulators on silicon substrates using low inductance thick metal traveling wave electrodes, which reduce RF phase index and microwave losses while preserving high EO modulation efficiency. We demonstrate a TFLN EO modulator on silicon substrate with 3 dB EO bandwidth \n<inline-formula><tex-math>$>$</tex-math></inline-formula>\n 120 GHz and half-wave voltage \n<inline-formula><tex-math>$(V_\\pi) < $</tex-math></inline-formula>\n 2 V. Bandwidth/\n<inline-formula><tex-math>$V_\\pi$</tex-math></inline-formula>\n reach 60, which is significantly larger than traditional TFLN modulators. The proposed thin-film lithium niobate modulators offers a practical solution for the hybrid integration of silicon and lithium niobate.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-5"},"PeriodicalIF":2.1000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10711217","citationCount":"0","resultStr":"{\"title\":\"120 GHz Sub-2 V Thin-Film Lithium Niobate Modulators on Silicon Substrate Using Thick Capacitively Loaded Slow Wave Electrodes\",\"authors\":\"Zhiguo Yu;Donghe Tu;Wei Yan;Huan Guan;Lei Jiang;Xuejiao Sun;Zhiyong Li\",\"doi\":\"10.1109/JPHOT.2024.3477311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electro-optic modulators with large bandwidth and low voltage are crucial for the high-baud-rate digital communication and high-carrier-frequency analog links. Recently, thin-film lithium niobate (TFLN) modulators with sub-1 V voltage and 140 GHz bandwidth have been emerged on the low permittivity substrates, such as quartz. However, on the high permittivity environment, such as silicon substrates, the bandwidth dramatically reduced to below 100 GHz even if the voltage was raised to around 3 V. We break the voltage–bandwidth trade-off limit in TFLN modulators on silicon substrates using low inductance thick metal traveling wave electrodes, which reduce RF phase index and microwave losses while preserving high EO modulation efficiency. We demonstrate a TFLN EO modulator on silicon substrate with 3 dB EO bandwidth \\n<inline-formula><tex-math>$>$</tex-math></inline-formula>\\n 120 GHz and half-wave voltage \\n<inline-formula><tex-math>$(V_\\\\pi) < $</tex-math></inline-formula>\\n 2 V. Bandwidth/\\n<inline-formula><tex-math>$V_\\\\pi$</tex-math></inline-formula>\\n reach 60, which is significantly larger than traditional TFLN modulators. The proposed thin-film lithium niobate modulators offers a practical solution for the hybrid integration of silicon and lithium niobate.\",\"PeriodicalId\":13204,\"journal\":{\"name\":\"IEEE Photonics Journal\",\"volume\":\"16 6\",\"pages\":\"1-5\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10711217\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10711217/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Journal","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10711217/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
具有大带宽和低电压的电光调制器对于高波特率数字通信和高载波频率模拟链路至关重要。最近,在石英等低介电常数基底上出现了电压低于 1 V、带宽为 140 GHz 的铌酸锂薄膜(TFLN)调制器。我们利用低电感厚金属行波电极打破了硅基板上 TFLN 调制器的电压-带宽权衡限制,在保持高 EO 调制效率的同时降低了射频相位指数和微波损耗。我们在硅衬底上展示了一种 TFLN EO 调制器,其 3 dB EO 带宽为 $>$ 120 GHz,半波电压为 $(V_\pi) < $ 2 V,带宽/$V_\pi$达到 60,明显大于传统的 TFLN 调制器。所提出的铌酸锂薄膜调制器为硅和铌酸锂的混合集成提供了一种实用的解决方案。
120 GHz Sub-2 V Thin-Film Lithium Niobate Modulators on Silicon Substrate Using Thick Capacitively Loaded Slow Wave Electrodes
Electro-optic modulators with large bandwidth and low voltage are crucial for the high-baud-rate digital communication and high-carrier-frequency analog links. Recently, thin-film lithium niobate (TFLN) modulators with sub-1 V voltage and 140 GHz bandwidth have been emerged on the low permittivity substrates, such as quartz. However, on the high permittivity environment, such as silicon substrates, the bandwidth dramatically reduced to below 100 GHz even if the voltage was raised to around 3 V. We break the voltage–bandwidth trade-off limit in TFLN modulators on silicon substrates using low inductance thick metal traveling wave electrodes, which reduce RF phase index and microwave losses while preserving high EO modulation efficiency. We demonstrate a TFLN EO modulator on silicon substrate with 3 dB EO bandwidth
$>$
120 GHz and half-wave voltage
$(V_\pi) < $
2 V. Bandwidth/
$V_\pi$
reach 60, which is significantly larger than traditional TFLN modulators. The proposed thin-film lithium niobate modulators offers a practical solution for the hybrid integration of silicon and lithium niobate.
期刊介绍:
Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.